NVBLS0D5N04M8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVBLS0D5N04M8
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 429 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 300 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 82 nS
Cossⓘ - Capacitancia de salida: 4000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00057 Ohm
Paquete / Cubierta: MO-299A
Búsqueda de reemplazo de NVBLS0D5N04M8 MOSFET
NVBLS0D5N04M8 Datasheet (PDF)
nvbls0d5n04m8.pdf

NVBLS0D5N04M8MOSFET Power, Single,N-Channel40 V, 300 A, 0.57 mWFeatureswww.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS TJ = 25C unless otherwise notedMO-299AParameter
nvbls0d7n06c.pdf

MOSFET - Power, SingleN-Channel, TOLL60 V, 0.75 mW, 470 ANVBLS0D7N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 0.75 mW @ 10 V 470 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoH
nvbls0d7n04m8.pdf

NVBLS0D7N04M8MOSFET Power, Single,N-Channel40 V, 240 A, 0.75 mWFeatureswww.onsemi.com Typical RDS(on) = 0.59 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 144 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS TJ = 25C unless otherwise notedMO-299AParameter
nvbls001n06c.pdf

MOSFET - Power, SingleN-Channel, TOLL60 V, 0.9 mW, 422 ANVBLS001N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 0.9 mW @ 10 V 422 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Otros transistores... NVBG020N120SC1 , NVBG040N120SC1 , NVBG060N090SC1 , NVBG080N120SC1 , NVBG160N120SC1 , NVBGS4D1N15MC , NVBGS6D5N15MC , NVBLS001N06C , 13N50 , NVBLS0D7N04M8 , NVBLS0D7N06C , NVBLS1D1N08H , NVBLS4D0N15MC , NVC3S5A51PLZ , NVD5C446N , NVD5C454N , NVD5C454NL .
History: AO4705 | SHD231006



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
c1096 transistor | c1345 transistor | jcs640c | kn2907a | ncep028n85 datasheet | sw50n06 | 2sa1232 | 2sc1940