NVBLS0D7N04M8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVBLS0D7N04M8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 357 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 240 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 73 nS

Cossⓘ - Capacitancia de salida: 3300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00075 Ohm

Encapsulados: MO-299A

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NVBLS0D7N04M8 datasheet

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 nvbls0d7n04m8.pdf pdf_icon

NVBLS0D7N04M8

NVBLS0D7N04M8 MOSFET Power, Single, N-Channel 40 V, 240 A, 0.75 mW Features www.onsemi.com Typical RDS(on) = 0.59 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 144 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25 C unless otherwise noted MO-299A Parameter

 4.1. Size:396K  onsemi
 nvbls0d7n06c.pdf pdf_icon

NVBLS0D7N04M8

MOSFET - Power, Single N-Channel, TOLL 60 V, 0.75 mW, 470 A NVBLS0D7N06C Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 60 V 0.75 mW @ 10 V 470 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoH

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 nvbls0d5n04m8.pdf pdf_icon

NVBLS0D7N04M8

NVBLS0D5N04M8 MOSFET Power, Single, N-Channel 40 V, 300 A, 0.57 mW Features www.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25 C unless otherwise noted MO-299A Parameter

 8.1. Size:394K  onsemi
 nvbls001n06c.pdf pdf_icon

NVBLS0D7N04M8

MOSFET - Power, Single N-Channel, TOLL 60 V, 0.9 mW, 422 A NVBLS001N06C Features www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 60 V 0.9 mW @ 10 V 422 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

MOSTRAR MÁS

Otros transistores... NVBG040N120SC1, NVBG060N090SC1, NVBG080N120SC1, NVBG160N120SC1, NVBGS4D1N15MC, NVBGS6D5N15MC, NVBLS001N06C, NVBLS0D5N04M8, RFP50N06, NVBLS0D7N06C, NVBLS1D1N08H, NVBLS4D0N15MC, NVC3S5A51PLZ, NVD5C446N, NVD5C454N, NVD5C454NL, NVD5C632NL