NVBLS0D7N06C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NVBLS0D7N06C Datasheet (PDF)

..1. Size:396K onsemi
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MOSFET - Power, SingleN-Channel, TOLL60 V, 0.75 mW, 470 ANVBLS0D7N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 0.75 mW @ 10 V 470 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoH

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NVBLS0D7N04M8MOSFET Power, Single,N-Channel40 V, 240 A, 0.75 mWFeatureswww.onsemi.com Typical RDS(on) = 0.59 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 144 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS TJ = 25C unless otherwise notedMO-299AParameter

7.1. Size:490K onsemi
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NVBLS0D5N04M8MOSFET Power, Single,N-Channel40 V, 300 A, 0.57 mWFeatureswww.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS TJ = 25C unless otherwise notedMO-299AParameter

8.1. Size:394K onsemi
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MOSFET - Power, SingleN-Channel, TOLL60 V, 0.9 mW, 422 ANVBLS001N06CFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMIV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 0.9 mW @ 10 V 422 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .