NVHL027N65S3F Todos los transistores

 

NVHL027N65S3F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVHL027N65S3F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 595 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0274 Ohm
   Paquete / Cubierta: TO-247
     - Selección de transistores por parámetros

 

NVHL027N65S3F Datasheet (PDF)

 ..1. Size:601K  onsemi
nvhl027n65s3f.pdf pdf_icon

NVHL027N65S3F

MOSFET Power,N-Channel, SUPERFET) III,FRFET)650 V, 75 A, 27.4 mWNVHL027N65S3Fwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailore

 8.1. Size:308K  onsemi
nvhl020n120sc1.pdf pdf_icon

NVHL027N65S3F

MOSFET - SiC Power, SingleN-ChannelNVHL020N120SC11200 V, 20 mW, 103 AFeatures Typ. RDS(on) = 20 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 203 nC) Low Effective Output Capacitance (typ. Coss = 260 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 28 mW @ 20 V 103 A These Devices are RoHS CompliantTypical

 8.2. Size:393K  onsemi
nvhl025n65s3.pdf pdf_icon

NVHL027N65S3F

NVHL025N65S3MOSFET Power,N-Channel, AutomotiveSUPERFET) III, Easy-drive650 V, 75 A, 25 mWwww.onsemi.comDescriptionBVDSS RDS(on) MAX ID MAXSuperFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing charge650 V 25 m @ 10 V 75 Abalance technology for outstanding low on-resistance and lower gatecharge performan

 9.1. Size:355K  1
nvhl055n60s5f.pdf pdf_icon

NVHL027N65S3F

DATA SHEETwww.onsemi.comMOSFET Power, SingleVDSS RDS(ON) MAX ID MAX600 V 55 mW @ 10 V 45 AN-Channel, SUPERFET) V,FRFET), TO247-3LD600 V, 55 mW, 45 ANVHL055N60S5FDescriptionGThe SUPERFET V MOSFET FRFET series has optimized bodydiode performance characteristics. This can allow for the removal ofcomponents in the application and improve application performanceSa

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History: 2SK2818 | MTN50N06E3 | SM3116NAF | AP050N03Q | IPI051N15N5 | SSFT4004 | CPC3730

 

 
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