NVHL040N65S3F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NVHL040N65S3F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 446 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 53 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO-247

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NVHL040N65S3F Datasheet (PDF)

..1. Size:371K onsemi
nvhl040n65s3f.pdf

NVHL040N65S3FMOSFET Power,N-Channel, SUPERFET) III,FRFET)650 V, 65 A, 40 mWwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 40 mW @ 10 V 65 Acharge performance. This advance

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nvhl055n60s5f.pdf

DATA SHEETwww.onsemi.comMOSFET Power, SingleVDSS RDS(ON) MAX ID MAX600 V 55 mW @ 10 V 45 AN-Channel, SUPERFET) V,FRFET), TO247-3LD600 V, 55 mW, 45 ANVHL055N60S5FDescriptionGThe SUPERFET V MOSFET FRFET series has optimized bodydiode performance characteristics. This can allow for the removal ofcomponents in the application and improve application performanceSa

9.2. Size:322K onsemi
nvhl072n65s3.pdf

NVHL072N65S3MOSFET Power,N-Channel, SUPERFET) III,Automotive, Easy-drive650 V, 44 A, 72 mWwww.onsemi.comDescriptionSuperFET III MOSFET is ON Semiconductors brand-new highBVDSS RDS(on) MAX ID MAXvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate650 V 72 m @ 10 V 44 Acharge performa

9.3. Size:601K onsemi
nvhl027n65s3f.pdf

MOSFET Power,N-Channel, SUPERFET) III,FRFET)650 V, 75 A, 27.4 mWNVHL027N65S3Fwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailore

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nvhl060n090sc1.pdf

MOSFET - SiC Power, SingleN-Channel900 V, 60 mW, 46 ANVHL060N090SC1Features Typ. RDS(on) = 60 mW @ VGS = 15 V Typ. RDS(on) = 43 mW @ VGS = 18 Vwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 87 nC) Low Effective Output Capacitance (typ. Coss = 113 pF) 100% UIL Tested V(BR)DSS RDS(on) MAX ID MAX Qualified According to AEC-Q101900 V 84 mW @ 15 V 46 A

9.5. Size:377K onsemi
nvhl082n65s3f.pdf

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9.6. Size:355K onsemi
nvhl050n65s3hf.pdf

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9.7. Size:308K onsemi
nvhl020n120sc1.pdf

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nvhl080n120sc1.pdf

MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANVHL080N120SC1Features Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS CompliantTypical Ap

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nvhl080n120sc1a.pdf

MOSFET - SiC Power, SingleN-Channel1200 V, 80 mW, 31 ANVHL080N120SC1AFeatures Typ. RDS(on) = 80 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 56 nC) Low Effective Output Capacitance (typ. Coss = 80 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested Qualified According to AEC-Q101 1200 V 110 mW @ 20 V 31 A These Devices are RoHS CompliantTypical A

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nvhl025n65s3.pdf

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