NVHL040N65S3F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVHL040N65S3F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 446 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: TO-247
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NVHL040N65S3F Datasheet (PDF)
nvhl040n65s3f.pdf

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MOSFET Power,N-Channel, SUPERFET) III,FRFET)650 V, 75 A, 27.4 mWNVHL027N65S3Fwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailore
Otros transistores... NVD6415ANL , NVF2955P , NVH4L040N120SC1 , NVH4L080N120SC1 , NVH4L160N120SC1 , NVHL020N120SC1 , NVHL025N65S3 , NVHL027N65S3F , STP65NF06 , NVHL050N65S3HF , NVHL060N090SC1 , NVHL072N65S3 , NVHL080N120SC1 , NVHL080N120SC1A , NVHL082N65S3F , NVHL160N120SC1 , NVMFD016N06C .
History: AP50T10GH-HF | HGA098N10A
History: AP50T10GH-HF | HGA098N10A



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