NVMFD030N06C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVMFD030N06C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 23 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1.2 nS

Cossⓘ - Capacitancia de salida: 173 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0297 Ohm

Encapsulados: DFN8-5X6

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NVMFD030N06C datasheet

 ..1. Size:227K  onsemi
 nvmfd030n06c.pdf pdf_icon

NVMFD030N06C

MOSFET - Power, Dual N-Channel, DUAL SO-8FL 60 V, 29.7 mW, 19 A NVMFD030N06C Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFWD030N06C - Wettable Flank Option for Enhanced Optical Inspection 60 V 29.7 mW @ 10 V 19 A AEC-Q

 8.1. Size:229K  1
 nvmfd024n06ct1g.pdf pdf_icon

NVMFD030N06C

MOSFET Power, Dual N-Channel, SO-8FL 60 V, 22.6 mW, 24 A NVMFD024N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical 60 V 22.6 mW @ 10 V 24 A Inspection AEC-Q101

 8.2. Size:163K  onsemi
 nvmfd016n06c.pdf pdf_icon

NVMFD030N06C

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 16.3 mW, 32 A NVMFD016N06C Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFWD016N06C - Wettable Flank Option for Enhanced Optical Inspection 60 V 16.3 mW @ 10 V 32 A AEC-Q10

 8.3. Size:224K  onsemi
 nvmfd020n06c.pdf pdf_icon

NVMFD030N06C

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 mW, 27 A NVMFD020N06C Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFWD020N06C - Wettable Flank Option for Enhanced Optical Inspection 60 V 20.3 mW @ 10 V 27 A AEC-Q1

MOSTRAR MÁS

Otros transistores... NVHL072N65S3, NVHL080N120SC1, NVHL080N120SC1A, NVHL082N65S3F, NVHL160N120SC1, NVMFD016N06C, NVMFD020N06C, NVMFD024N06C, AO4407A, NVMFD5853NWF, NVMFD5875NL, NVMFD5C446N, NVMFD5C446NL, NVMFD5C462N, NVMFD5C462NL, NVMFD5C466N, NVMFD5C466NL