NVMFD5853NWF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVMFD5853NWF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 58 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 53 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: DFN8-5X6

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NVMFD5853NWF datasheet

 ..1. Size:202K  onsemi
 nvmfd5853n nvmfd5853nwf.pdf pdf_icon

NVMFD5853NWF

NVMFD5853N, NVMFD5853NWF MOSFET Dual N-Channel, Dual SO-8FL 40 V, 10 mW, 53 A http //onsemi.com Features Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 40 V 10 mW @ 10 V 53 A NVMFD5853NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable

 4.1. Size:120K  onsemi
 nvmfd5853n.pdf pdf_icon

NVMFD5853NWF

NVMFD5853N, NVMFD5853NWF Power MOSFET 40 V, 10 mW, 53 A, Dual N-Channel, Dual SO-8FL Features http //onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5853NWF - Wettable Flanks Product 40 V 10 mW @ 10 V 53 A AEC-Q101 Qualified and PPAP Capabl

 4.2. Size:75K  onsemi
 nvmfd5853nl.pdf pdf_icon

NVMFD5853NWF

NVMFD5853NL Power MOSFET 40 V, 10 mW, 34 A, Dual N-Channel Logic Level, Dual SO-8FL Features Small Footprint (5x6 mm) for Compact Designs http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5853NLWF - Wettable Flanks Option for Enhanced Optical 10 mW @ 10 V Inspection 40 V 34 A A

 6.1. Size:78K  onsemi
 nvmfd5852nl.pdf pdf_icon

NVMFD5853NWF

NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N-Channel Logic Level, Dual SO-8FL Features Small Footprint (5x6 mm) for Compact Designs http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5852NLWF - Wettable Flanks Option for Enhanced Optical 6.9 mW @ 10 V Inspection 40 V 44 A

MOSTRAR MÁS

Otros transistores... NVHL080N120SC1, NVHL080N120SC1A, NVHL082N65S3F, NVHL160N120SC1, NVMFD016N06C, NVMFD020N06C, NVMFD024N06C, NVMFD030N06C, 60N06, NVMFD5875NL, NVMFD5C446N, NVMFD5C446NL, NVMFD5C462N, NVMFD5C462NL, NVMFD5C466N, NVMFD5C466NL, NVMFD5C470N