NVMFD5C470N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVMFD5C470N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 36 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0117 Ohm

Encapsulados: DFN8-5X6

 Búsqueda de reemplazo de NVMFD5C470N MOSFET

- Selecciónⓘ de transistores por parámetros

 

NVMFD5C470N datasheet

 ..1. Size:209K  onsemi
 nvmfd5c470n.pdf pdf_icon

NVMFD5C470N

NVMFD5C470N MOSFET Power, Dual N-Channel 40 V, 11.7 mW, 36 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 40 V 11.7 mW @ 10 V 36 A AEC-Q101 Qualifie

 0.1. Size:200K  onsemi
 nvmfd5c470nl.pdf pdf_icon

NVMFD5C470N

NVMFD5C470NL MOSFET Power, Dual N-Channel 40 V, 11.5 mW, 36 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 11.5 mW @ 10 V 40 V AEC-Q101 Qualified

 5.1. Size:196K  onsemi
 nvmfd5c478n.pdf pdf_icon

NVMFD5C470N

NVMFD5C478N Power MOSFET 40 V, 17.0 mW, 27 A, Dual N-Channel Features Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Comp

 5.2. Size:155K  onsemi
 nvmfd5c478nl.pdf pdf_icon

NVMFD5C470N

NVMFD5C478NL Power MOSFET 40 V, 14.5 mW, 29 A, Dual N-Channel Features Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Co

MOSTRAR MÁS

Otros transistores... NVMFD5853NWF, NVMFD5875NL, NVMFD5C446N, NVMFD5C446NL, NVMFD5C462N, NVMFD5C462NL, NVMFD5C466N, NVMFD5C466NL, 20N60, NVMFD5C470NL, NVMFD5C478N, NVMFD5C478NL, NVMFD5C650NL, NVMFD5C668NL, NVMFD5C672NL, NVMFD5C674NL, NVMFD5C680NL