NVMFD5C470NL Todos los transistores

 

NVMFD5C470NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVMFD5C470NL
   Código: 5C470L_470LWF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 9 nC
   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
   Paquete / Cubierta: DFN8-5X6
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NVMFD5C470NL Datasheet (PDF)

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NVMFD5C470NL

NVMFD5C470NLMOSFET Power, DualN-Channel40 V, 11.5 mW, 36 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection11.5 mW @ 10 V40 V AEC-Q101 Qualified

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NVMFD5C470NL

NVMFD5C470NMOSFET Power, DualN-Channel40 V, 11.7 mW, 36 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 11.7 mW @ 10 V 36 A AEC-Q101 Qualifie

 5.1. Size:196K  onsemi
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NVMFD5C470NL

NVMFD5C478NPower MOSFET40 V, 17.0 mW, 27 A, Dual N-ChannelFeatures Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Comp

 5.2. Size:155K  onsemi
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NVMFD5C470NL

NVMFD5C478NLPower MOSFET40 V, 14.5 mW, 29 A, Dual N-ChannelFeatures Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Co

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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