NVMFD5C650NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NVMFD5C650NLMOSFET Power, DualN-Channel60 V, 4.2 mW, 111 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C650NLWF - Wettable Flank Option for Enhanced Optical4.2 mW @ 10 VInspection60 V111 A AEC-Q101 Qual

NVMFD5C668NLMOSFET Power, DualN-Channel60 V, 6.5 mW, 68 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C668NLWF - Wettable Flank Option for Enhanced Optical6.5 mW @ 10 V60 VInspection68 A9.2 mW @ 4.5 V

MOSFET Power, DualN-Channel60 V, 11.9 mW, 40 ANVMFD5C672NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C672NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAXInspection11.9 mW @ 10 V60 V40 A AEC-Q101 Quali

NVMFD5C680NLMOSFET Power, DualN-Channel60 V, 28 mW, 26 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C680NLWF - Wettable Flank Option for Enhanced Optical28 mW @ 10 V60 VInspection26 A41 mW @ 4.5 V AE

MOSFET Power, DualN-Channel60 V, 14.4 mW, 42 ANVMFD5C674NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C674NLWF - Wettable Flank Option for Enhanced Optical14.4 mW @ 10 VInspection60 V42 A AEC-Q101 Qual