NVMFD5C650NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVMFD5C650NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 111 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 1258 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm

Encapsulados: DFN8-5X6

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NVMFD5C650NL datasheet

 ..1. Size:208K  onsemi
 nvmfd5c650nl.pdf pdf_icon

NVMFD5C650NL

NVMFD5C650NL MOSFET Power, Dual N-Channel 60 V, 4.2 mW, 111 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD5C650NLWF - Wettable Flank Option for Enhanced Optical 4.2 mW @ 10 V Inspection 60 V 111 A AEC-Q101 Qual

 6.1. Size:206K  onsemi
 nvmfd5c668nl.pdf pdf_icon

NVMFD5C650NL

NVMFD5C668NL MOSFET Power, Dual N-Channel 60 V, 6.5 mW, 68 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD5C668NLWF - Wettable Flank Option for Enhanced Optical 6.5 mW @ 10 V 60 V Inspection 68 A 9.2 mW @ 4.5 V

 6.2. Size:206K  onsemi
 nvmfd5c672nl.pdf pdf_icon

NVMFD5C650NL

MOSFET Power, Dual N-Channel 60 V, 11.9 mW, 40 A NVMFD5C672NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C672NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 11.9 mW @ 10 V 60 V 40 A AEC-Q101 Quali

 6.3. Size:340K  onsemi
 nvmfd5c680nl.pdf pdf_icon

NVMFD5C650NL

NVMFD5C680NL MOSFET Power, Dual N-Channel 60 V, 28 mW, 26 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFD5C680NLWF - Wettable Flank Option for Enhanced Optical 28 mW @ 10 V 60 V Inspection 26 A 41 mW @ 4.5 V AE

MOSTRAR MÁS

Otros transistores... NVMFD5C462N, NVMFD5C462NL, NVMFD5C466N, NVMFD5C466NL, NVMFD5C470N, NVMFD5C470NL, NVMFD5C478N, NVMFD5C478NL, IRFP460, NVMFD5C668NL, NVMFD5C672NL, NVMFD5C674NL, NVMFD5C680NL, NVMFD6H840NL, NVMFD6H846NL, NVMFD6H852NL, NVMFS015N10MCL