NVMFD5C650NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NVMFD5C650NL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 111 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 1258 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: DFN8-5X6

Búsqueda de reemplazo de MOSFET NVMFD5C650NL

NVMFD5C650NL Datasheet (PDF)

..1. Size:208K onsemi
nvmfd5c650nl.pdf

NVMFD5C650NLMOSFET Power, DualN-Channel60 V, 4.2 mW, 111 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C650NLWF - Wettable Flank Option for Enhanced Optical4.2 mW @ 10 VInspection60 V111 A AEC-Q101 Qual

6.1. Size:206K onsemi
nvmfd5c668nl.pdf

NVMFD5C668NLMOSFET Power, DualN-Channel60 V, 6.5 mW, 68 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C668NLWF - Wettable Flank Option for Enhanced Optical6.5 mW @ 10 V60 VInspection68 A9.2 mW @ 4.5 V

6.2. Size:206K onsemi
nvmfd5c672nl.pdf

MOSFET Power, DualN-Channel60 V, 11.9 mW, 40 ANVMFD5C672NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C672NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAXInspection11.9 mW @ 10 V60 V40 A AEC-Q101 Quali

6.3. Size:340K onsemi
nvmfd5c680nl.pdf

NVMFD5C680NLMOSFET Power, DualN-Channel60 V, 28 mW, 26 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C680NLWF - Wettable Flank Option for Enhanced Optical28 mW @ 10 V60 VInspection26 A41 mW @ 4.5 V AE

6.4. Size:347K onsemi
nvmfd5c674nl.pdf

MOSFET Power, DualN-Channel60 V, 14.4 mW, 42 ANVMFD5C674NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C674NLWF - Wettable Flank Option for Enhanced Optical14.4 mW @ 10 VInspection60 V42 A AEC-Q101 Qual

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: