NVMFD6H852NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NVMFD6H852NLPower MOSFET80 V, 25.5 mW, 25 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFD6H852NLWF - Wettable Flank Option for EnhancedOptical InspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable25.5 mW @

NVMFD6H840NLPower MOSFET80 V, 6.9 mW, 74 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFD6H840NLWF - Wettable Flank Option for EnhancedOptical InspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable6.9 mW @ 1

MOSFET - Power, DualN-Channel80 V, 15 mW, 31 ANVMFD6H846NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD6H846NLWF - Wettable Flank Option for Enhanced15 mW @ 10 VOptical Inspection80 V31 A19 mW @ 4.5 V AEC-

MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101

NVMFD5483NLMOSFET Power, DualN-Channel60 V, 36 mW, 24 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses36 mW @ 10 V 175C Operating Temperature60 V 24 A NVMFD5483NLWF - Wettable Flank Option for Enhanced Optical 45 mW @ 4

NVMFD5C668NLMOSFET Power, DualN-Channel60 V, 6.5 mW, 68 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C668NLWF - Wettable Flank Option for Enhanced Optical6.5 mW @ 10 V60 VInspection68 A9.2 mW @ 4.5 V

NVMFD5C446NLMOSFET Power, DualN-Channel40 V, 2.65 mW, 145 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C446NLWF - Wettable Flank Option for Enhanced Optical2.65 mW @ 10 VInspection40 V145 A3.9 mW @ 4.5 V

NVMFD5C466NMOSFET Power, DualN-Channel40 V, 8.1 mW, 49 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C466NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 8.1 mW @ 10 V 49 A AEC-Q101 Qualified

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 16.3 mW, 32 ANVMFD016N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD016N06C - Wettable Flank Option for Enhanced OpticalInspection 60 V 16.3 mW @ 10 V 32 A AEC-Q10

NVMFD5853N,NVMFD5853NWFPower MOSFET40 V, 10 mW, 53 A, Dual N-Channel, DualSO-8FLFeatureshttp://onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5853NWF - Wettable Flanks Product40 V 10 mW @ 10 V 53 A AEC-Q101 Qualified and PPAP Capabl

NVMFD5483NLPower MOSFET60 V, 36 mW, 24 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses 175C Operating TemperatureV(BR)DSS RDS(on) MAX ID MAX NVMFD5483NLWF - Wettable Flank Option for Enhanced Optical36 mW @ 10 VInspection60 V 24 A

NVMFD5C446NPower MOSFET40 V, 2.9 mW, 127 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com NVMFD5C446NWF - Wettable Flank Option for Enhanced OpticalInspection AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These D

NVMFD5C650NLMOSFET Power, DualN-Channel60 V, 4.2 mW, 111 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C650NLWF - Wettable Flank Option for Enhanced Optical4.2 mW @ 10 VInspection60 V111 A AEC-Q101 Qual

MOSFET - Power, DualN-Channel, DUAL SO-8FL60 V, 29.7 mW, 19 ANVMFD030N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD030N06C - Wettable Flank Option for Enhanced OpticalInspection60 V 29.7 mW @ 10 V 19 A AEC-Q

NVMFD5C462NMOSFET Power, DualN-Channel40 V, 5.4 mW, 70 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C462NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 5.4 mW @ 10 V 70 A AEC-Q101 Qualified

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 20.3 mW, 27 ANVMFD020N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD020N06C - Wettable Flank Option for Enhanced OpticalInspection60 V 20.3 mW @ 10 V 27 A AEC-Q1

NVMFD5485NLPower MOSFET60 V, 44 mW, 20 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses 175C Operating TemperatureV(BR)DSS RDS(on) MAX ID MAX NVMFD5485NLWF - Wettable Flank Option for Enhanced Optical44 mW @ 10 VInspection60 V 20 A

MOSFET Power, DualN-Channel60 V, 11.9 mW, 40 ANVMFD5C672NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C672NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAXInspection11.9 mW @ 10 V60 V40 A AEC-Q101 Quali

NVMFD5C470NMOSFET Power, DualN-Channel40 V, 11.7 mW, 36 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 11.7 mW @ 10 V 36 A AEC-Q101 Qualifie

NVMFD5C466NLMOSFET Power, DualN-Channel40 V, 7.4 mW, 52 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C466NLWF - Wettable Flank Option for Enhanced OpticalInspection7.4 mW @ 10 V40 V52 A AEC-Q101 Qualif

NVMFD5853N,NVMFD5853NWFMOSFET Dual N-Channel,Dual SO-8FL40 V, 10 mW, 53 Ahttp://onsemi.comFeatures Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses40 V 10 mW @ 10 V 53 A NVMFD5853NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable

NVMFD5852NLPower MOSFET40 V, 6.9 mW, 44 A, Dual N-Channel LogicLevel, Dual SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFD5852NLWF - Wettable Flanks Option for Enhanced Optical6.9 mW @ 10 VInspection40 V 44 A

NVMFD5C462NLMOSFET Power, DualN-Channel40 V, 4.7 mW, 84 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C462NLWF - Wettable Flank Option for Enhanced Optical4.7 mW @ 10 VInspection40 V84 A AEC-Q101 Qualif

NVMFD5C680NLMOSFET Power, DualN-Channel60 V, 28 mW, 26 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C680NLWF - Wettable Flank Option for Enhanced Optical28 mW @ 10 V60 VInspection26 A41 mW @ 4.5 V AE

NVMFD5877NLMOSFET Power, DualN-Channel, Logic Level,Dual SO8FL60 V, 39 mW, 17 Ahttp://onsemi.comFeatures Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses39 mW @ 10 V NVMFD5877NLWF - Wettable Flanks Option for Enhanced Optical60 V 17 AInspection60 mW @ 4.5 V AEC-Q101 Qualified and PPAP Cap

NVMFD5873NLPower MOSFET60 V, 13 mW, 58 A, Dual N-Channel LogicLevel, Dual SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFD5873NLWF - Wettable Flanks Option for Enhanced Optical13 mW @ 10 VInspection60 V 58 A16.5

NVMFD5853NLPower MOSFET40 V, 10 mW, 34 A, Dual N-Channel LogicLevel, Dual SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFD5853NLWF - Wettable Flanks Option for Enhanced Optical10 mW @ 10 VInspection40 V 34 A A

NVMFD5C478NPower MOSFET40 V, 17.0 mW, 27 A, Dual N-ChannelFeatures Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Comp

MOSFET Power, DualN-Channel, SO-8FL60 V, 22.6 mW, 24 ANVMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWD024N06C - Wettable Flank Option for Enhanced Optical60 V 22.6 mW @ 10 V 24 AInspection AEC-Q101

MOSFET Power, DualN-Channel60 V, 14.4 mW, 42 ANVMFD5C674NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFD5C674NLWF - Wettable Flank Option for Enhanced Optical14.4 mW @ 10 VInspection60 V42 A AEC-Q101 Qual

NVMFD5875NLMOSFET Power, DualN-Channel, Logic Level,Dual SO8FL60 V, 33 mW, 22 Awww.onsemi.comFeatures Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses33 mW @ 10 V NVMFD5875NLWF - Wettable Flanks Option for Enhanced Optical60 V 22 A45 mW @ 4.5 VInspection AEC-Q101 Qualified and PPAP Capabl

NVMFD5489NLPower MOSFET60 V, 65 mW, 12 A, Dual N-Ch Logic LevelFeatures Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses 175C Operating TemperatureV(BR)DSS RDS(on) MAX ID MAX NVMFD5489NLWF - Wettable Flank Option for Enhanced Optical65 mW @ 10 VInspection60 V

NVMFD5C470NLMOSFET Power, DualN-Channel40 V, 11.5 mW, 36 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C470NLWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection11.5 mW @ 10 V40 V AEC-Q101 Qualified

NVMFD5C478NLPower MOSFET40 V, 14.5 mW, 29 A, Dual N-ChannelFeatures Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Co