NVMFS020N06C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVMFS020N06C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1.4 nS

Cossⓘ - Capacitancia de salida: 260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0196 Ohm

Encapsulados: SO8FL

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NVMFS020N06C datasheet

 ..1. Size:176K  onsemi
 nvmfs020n06c.pdf pdf_icon

NVMFS020N06C

MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 mW, 28 A NVMFS020N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS020N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 60 V 19.6 mW @ 10 V 28 A AEC-Q101

 7.1. Size:177K  onsemi
 nvmfs024n06c.pdf pdf_icon

NVMFS020N06C

MOSFET - Power, Single N-Channel, SO-8 FL 60 V, 22 mW, 25 A NVMFS024N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS024N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 60 V 22 mW @ 10 V 25 A AEC-Q101 Qua

 8.1. Size:189K  onsemi
 nvmfs015n10mcl.pdf pdf_icon

NVMFS020N06C

MOSFET - Power, Single N-Channel 100 V, 12.2 mW, 47.1 A NVMFS015N10MCL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFWS015N10MCL - Wettable Flank Option for Enhanced 12.2 mW @ 10 V Optical Inspection 100 V 47.1 A 18.3 mW @

 8.2. Size:175K  onsemi
 nvmfs016n06c.pdf pdf_icon

NVMFS020N06C

MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 mW, 33 A NVMFS016N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS016N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 60 V 15.6 mW @ 10 V 33 A AEC-Q101

MOSTRAR MÁS

Otros transistores... NVMFD5C672NL, NVMFD5C674NL, NVMFD5C680NL, NVMFD6H840NL, NVMFD6H846NL, NVMFD6H852NL, NVMFS015N10MCL, NVMFS016N06C, IRF3710, NVMFS024N06C, NVMFS3D6N10MCL, NVMFS4C302N, NVMFS4C310N, NVMFS5A140PLZ, NVMFS5A160PLZ, NVMFS5C406N, NVMFS5C406NL