NVMFS5C406N Todos los transistores

 

NVMFS5C406N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVMFS5C406N
   Código: 5C406N_406NWF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 179 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 353 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 110 nC
   trⓘ - Tiempo de subida: 116 nS
   Cossⓘ - Capacitancia de salida: 4530 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0008 Ohm
   Paquete / Cubierta: DFN5

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NVMFS5C406N Datasheet (PDF)

 ..1. Size:177K  onsemi
nvmfs5c406n.pdf

NVMFS5C406N
NVMFS5C406N

MOSFET - Power, SingleN-Channel40 V, 0.8 mW, 353 ANVMFS5C406NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C406NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 0.8 mW @ 10 V 353 A AEC-Q101 Qualifie

 0.1. Size:191K  onsemi
nvmfs5c406nl.pdf

NVMFS5C406N
NVMFS5C406N

NVMFS5C406NLMOSFET Power, SingleN-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C406NLWF - Wettable Flank Option for Enhanced Optical0.7 mW @ 10 VInspection40 V 362 A AEC-Q101 Qua

 5.1. Size:75K  onsemi
nvmfs5c404nl.pdf

NVMFS5C406N
NVMFS5C406N

NVMFS5C404NLPower MOSFET40 V, 0.75 mW, 352 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable0.7

 5.2. Size:70K  onsemi
nvmfs5c404n.pdf

NVMFS5C406N
NVMFS5C406N

NVMFS5C404NPower MOSFET40 V, 0.7 mW, 378 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 0.7

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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