NVMFS5C426NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVMFS5C426NL
Código: 5C426L_426LWF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 128 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 237 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 93 nC
Tiempo de subida (tr): 72 nS
Conductancia de drenaje-sustrato (Cd): 2600 pF
Resistencia entre drenaje y fuente RDS(on): 0.0012 Ohm
Paquete / Cubierta: DFN5
Búsqueda de reemplazo de MOSFET NVMFS5C426NL
NVMFS5C426NL Datasheet (PDF)
nvmfs5c426nl.pdf
MOSFET Power, SingleN-Channel40 V, 1.2 mW, 237 ANVMFS5C426NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C426NLWF - Wettable Flank Option for Enhanced Optical1.2 mW @ 10 VInspection40 V 237 A1.8 mW @ 4.5 V
nvmfs5c426n.pdf
NVMFS5C426NPower MOSFET40 V, 1.3 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C426NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 1.3
nvmfs5c423nl.pdf
NVMFS5C423NLPower MOSFET40 V, 2.0 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C423NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable2.0 mW
nvmfs5c450nl.pdf
NVMFS5C450NLPower MOSFET40 V, 2.8 mW, 110 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C450NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable2.8 mW
nvmfs5c404nl.pdf
NVMFS5C404NLPower MOSFET40 V, 0.75 mW, 352 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable0.7
nvmfs5c460n.pdf
NVMFS5C460NMOSFET Power, SingleN-Channel40 V, 5.3 mW, 71 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C460NWF - Wettable Flank Option for Enhanced OpticalInspection 40 V 5.3 mW @ 10 V 71 A AEC-Q101 Qualified
nvmfs5c456nl.pdf
NVMFS5C456NLMOSFET Power, SingleN-Channel40 V, 3.7 mW, 87 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C456NLWF - Wettable Flank Option for Enhanced Optical3.7 mW @ 10 VInspection40 V 87 A6.0 mW @ 4.5 V
nvmfs5c460nl.pdf
NVMFS5C460NLMOSFET Power, SingleN-Channel40 V, 4.5 mW, 78 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C460NLWF - Wettable Flank Option for Enhanced Optical4.5 mW @ 10 VInspection 40 V 78 A7.2 mW @ 4.5 V
nvmfs5c410nl.pdf
NVMFS5C410NLPower MOSFET40 V, 0.9 mW, 315 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C410NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable0.9
nvmfs5c468n.pdf
NVMFS5C468NMOSFET Power, SingleN-Channel40 V, 12 mW, 35 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C468NWF - Wettable Flank Option for Enhanced Optical40 V 12 mW @ 10 V 35 AInspection AEC-Q101 Qualified
nvmfs5c404n.pdf
NVMFS5C404NPower MOSFET40 V, 0.7 mW, 378 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 0.7
nvmfs5c430n.pdf
NVMFS5C430NMOSFET Power, SingleN-Channel40 V, 1.7 mW, 185 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C430NWF - Wettable Flank Option for Enhanced Optical40 V 1.7 mW @ 10 V 185 AInspection AEC-Q101 Qualif
nvmfs5c406nl.pdf
NVMFS5C406NLMOSFET Power, SingleN-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C406NLWF - Wettable Flank Option for Enhanced Optical0.7 mW @ 10 VInspection40 V 362 A AEC-Q101 Qua
nvmfs5c430nl.pdf
NVMFS5C430NLMOSFET Power, SingleN-Channel40 V, 1.4 mW, 200 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C430NLWF - Wettable Flank Option for Enhanced Optical1.4 mW @ 10 V40 V 200 AInspection2.2 mW @ 4.5 V
nvmfs5c468nl.pdf
NVMFS5C468NLMOSFET Power, SingleN-Channel40 V, 10.3 mW, 37 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C468NLWF - Wettable Flank Option for Enhanced Optical10.3 mW @ 10 VInspection40 V 37 A17.6 mW @ 4.5 V
nvmfs5c466n.pdf
NVMFS5C466NMOSFET Power, SingleN-Channel40 V, 8.1 mW, 49 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C466NWF - Wettable Flank Option for Enhanced Optical40 V 8.1 mW @ 10 V 49 AInspection AEC-Q101 Qualifie
nvmfs5c442n.pdf
NVMFS5C442NPower MOSFET40 V, 2.3 mW, 140 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C442NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 2.3
nvmfs5c442nl.pdf
NVMFS5C442NLPower MOSFET40 V, 2.8 mW, 127 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com NVMFS5C442NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable2.8
nvmfs5c406n.pdf
MOSFET - Power, SingleN-Channel40 V, 0.8 mW, 353 ANVMFS5C406NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C406NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 0.8 mW @ 10 V 353 A AEC-Q101 Qualifie
nvmfs5c450n.pdf
NVMFS5C450NMOSFET Power, SingleN-Channel40 V, 3.3 mW, 102 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C450NWF - Wettable Flank Option for Enhanced Optical40 V 3.3 mW @ 10 V 102 AInspection AEC-Q101 Qualif
nvmfs5c456n.pdf
MOSFET Power, SingleN-Channel40 V, 4.5 mW, 80 ANVMFS5C456NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C456NWF - Wettable Flank Option for Enhanced Optical40 V 4.5 mW @ 10 V 80 AInspection AEC-Q101 Qualifie
nvmfs5c410n.pdf
MOSFET - Power, SingleN-Channel40 V, 0.92 mW, 300 ANVMFS5C410NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C410NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection40 V 0.92 mW @ 10 V 300 A AEC-Q101 Qualif
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
