NVMFS5C612N Todos los transistores

NVMFS5C612N Power MOSFET Single N-Channel, 60 V, 1.65 mW, 225 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 60 V 1.6

NVMFS5C612NL Power MOSFET 60 V, 1.5 mW, 235 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 1.5 mW

MOSFET Power, Single, N-Channel 60 V, 7.0 mW, 71 A NVMFS5C670N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C670NWF - Wettable Flank Option for Enhanced Optical 60 V 7.0 mW @ 10 V 71 A Inspection AEC-Q101 Qualifi

NVMFS5C604NL Power MOSFET 60 V, 1.2 mW, 287 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C604NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 1.2 mW

NVMFS5C680NL MOSFET Power, Single N-Channel 60 V, 27.5 mW, 21 A Features Small Footprint (5 x 6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFS5C680NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 27.5 mW @ 10 V 60 V 21 A These D

MOSFET Power, Single, N-Channel 60 V, 10.7 mW, 50 A NVMFS5C673N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NWF - Wettable Flank Option for Enhanced Optical 60 V 10.7 mW @ 10 V 50 A Inspection AEC-Q101 Quali

MOSFET - Power, Single N-Channel 60 V, 3.0 mW, 150 A NVMFS5C628N Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C628NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 60 V 3.0 mW @ 10 V 150 A AEC-Q101 Qualifie

NVMFS5C638NL MOSFET Power, Single N-Channel 60 V, 3.0 mW, 133 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C638NLWF - Wettable Flank Option for Enhanced Optical 3.0 mW @ 10 V Inspection 60 V 133 A AEC-Q101 Qua

NVMFS5C682NL MOSFET Power, Single N-Channel 60 V, 21 mW, 25 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C682NLWF - Wettable Flank Option for Enhanced Optical 21 mW @ 10 V 60 V 25 A Inspection 31.5 mW @ 4.5 V

MOSFET Power, Single N-Channel 60 V, 9.2 mW, 50 A NVMFS5C673NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NLWF - Wettable Flank Option for Enhanced Optical 9.2 mW @ 10 V 60 V 50 A Inspection 13 mW @ 4.5 V

NVMFS5C670NL Power MOSFET 60 V, 6.1 mW, 71 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C670NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 6.1 mW @

NVMFS5C645NL Power MOSFET 60 V, 4.0 mW, 100 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C645NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 4.0 mW

NVMFS5C646NL Power MOSFET 60 V, 4.7 mW, 93 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C646NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 4.7 mW @