NVMFS5C612N Todos los transistores

 

NVMFS5C612N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVMFS5C612N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 167 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 225 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21.7 nS
   Cossⓘ - Capacitancia de salida: 3300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00165 Ohm
   Paquete / Cubierta: DFN5
 

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NVMFS5C612N Datasheet (PDF)

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NVMFS5C612N

NVMFS5C612NPower MOSFETSingle N-Channel, 60 V, 1.65 mW, 225 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 1.6

 0.1. Size:73K  onsemi
nvmfs5c612nl.pdf pdf_icon

NVMFS5C612N

NVMFS5C612NLPower MOSFET60 V, 1.5 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable1.5 mW

 6.1. Size:167K  onsemi
nvmfs5c670n.pdf pdf_icon

NVMFS5C612N

MOSFET Power, Single,N-Channel60 V, 7.0 mW, 71 ANVMFS5C670NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C670NWF - Wettable Flank Option for Enhanced Optical60 V 7.0 mW @ 10 V 71 AInspection AEC-Q101 Qualifi

 6.2. Size:72K  onsemi
nvmfs5c604nl.pdf pdf_icon

NVMFS5C612N

NVMFS5C604NLPower MOSFET60 V, 1.2 mW, 287 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C604NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable1.2 mW

Otros transistores... NVMFS5C450NL , NVMFS5C456N , NVMFS5C456NL , NVMFS5C460N , NVMFS5C460NL , NVMFS5C466N , NVMFS5C468N , NVMFS5C468NL , IRFB3607 , NVMFS5C628N , NVMFS5C628NL , NVMFS5C638NL , NVMFS5C645NL , NVMFS5C670N , NVMFS5C673N , NVMFS5C673NL , NVMFS5C677NL .

 

 
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