NVMFS5C628NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVMFS5C628NL
Código: 5C628L_628LWF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 110 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 150 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 52 nC
Tiempo de subida (tr): 55 nS
Conductancia de drenaje-sustrato (Cd): 1700 pF
Resistencia entre drenaje y fuente RDS(on): 0.0024 Ohm
Paquete / Cubierta: DFN5
Búsqueda de reemplazo de MOSFET NVMFS5C628NL
NVMFS5C628NL Datasheet (PDF)
nvmfs5c628nl.pdf
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NVMFS5C628NLMOSFET Power, SingleN-Channel60 V, 2.4 mW, 150 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C628NLWF - Wettable Flank Option for Enhanced Optical2.4 mW @ 10 V60 V 150 AInspection3.3 mW @ 4.5 V
nvmfs5c628n.pdf
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nvmfs5c670n.pdf
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nvmfs5c604nl.pdf
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nvmfs5c680nl.pdf
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NVMFS5C680NLMOSFET Power, SingleN-Channel60 V, 27.5 mW, 21 AFeatures Small Footprint (5 x 6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFS5C680NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable27.5 mW @ 10 V60 V 21 A These D
nvmfs5c673n.pdf
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MOSFET Power, Single,N-Channel60 V, 10.7 mW, 50 ANVMFS5C673NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NWF - Wettable Flank Option for Enhanced Optical60 V 10.7 mW @ 10 V 50 AInspection AEC-Q101 Quali
nvmfs5c638nl.pdf
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NVMFS5C638NLMOSFET Power, SingleN-Channel60 V, 3.0 mW, 133 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C638NLWF - Wettable Flank Option for Enhanced Optical3.0 mW @ 10 VInspection60 V 133 A AEC-Q101 Qua
nvmfs5c682nl.pdf
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NVMFS5C682NLMOSFET Power, SingleN-Channel60 V, 21 mW, 25 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C682NLWF - Wettable Flank Option for Enhanced Optical21 mW @ 10 V60 V 25 AInspection31.5 mW @ 4.5 V
nvmfs5c673nl.pdf
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MOSFET Power, SingleN-Channel60 V, 9.2 mW, 50 ANVMFS5C673NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NLWF - Wettable Flank Option for Enhanced Optical9.2 mW @ 10 V60 V 50 AInspection13 mW @ 4.5 V
nvmfs5c612nl.pdf
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NVMFS5C612NLPower MOSFET60 V, 1.5 mW, 235 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable1.5 mW
nvmfs5c612n.pdf
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NVMFS5C612NPower MOSFETSingle N-Channel, 60 V, 1.65 mW, 225 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable60 V 1.6
nvmfs5c670nl.pdf
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NVMFS5C670NLPower MOSFET60 V, 6.1 mW, 71 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C670NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable6.1 mW @
nvmfs5c645nl.pdf
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NVMFS5C645NLPower MOSFET60 V, 4.0 mW, 100 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C645NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable4.0 mW
nvmfs5c646nl.pdf
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NVMFS5C646NLPower MOSFET60 V, 4.7 mW, 93 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C646NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable4.7 mW @
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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