NVMFS6D1N08H Todos los transistores

 

NVMFS6D1N08H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVMFS6D1N08H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 89 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: DFN5
 

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NVMFS6D1N08H Datasheet (PDF)

 ..1. Size:134K  onsemi
nvmfs6d1n08h.pdf pdf_icon

NVMFS6D1N08H

NVMFS6D1N08HPower MOSFET80 V, 5.5 mW, 89 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFSW6D1N08H - Wettable Flank Option for Enhanced OpticalInspection AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These

 8.1. Size:174K  onsemi
nvmfs6h858nl.pdf pdf_icon

NVMFS6D1N08H

MOSFET - Power, SingleN-Channel80 V, 19.5 mW, 30 ANVMFS6H858NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H858NLWF - Wettable Flank Option for Enhanced OpticalInspection19.5 mW @ 10 V80 V 30 A AEC-Q101 Quali

 8.2. Size:176K  onsemi
nvmfs6h824n.pdf pdf_icon

NVMFS6D1N08H

MOSFET - Power, SingleN-Channel80 V, 4.5 mW, 107 ANVMFS6H824NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H824NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 4.5 mW @ 10 V 107 A AEC-Q101 Qualifie

 8.3. Size:174K  onsemi
nvmfs6h818n.pdf pdf_icon

NVMFS6D1N08H

NVMFS6H818NMOSFET Power, SingleN-Channel80 V, 3.7 mW, 123 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H818NWF - Wettable Flank Option for Enhanced OpticalInspection80 V 3.7 mW @ 10 V 123 A AEC-Q101 Qualif

Otros transistores... NVMFS5C677NL , NVMFS5C680NL , NVMFS5C682NL , NVMFS5H600NL , NVMFS5H663NL , NVMFS5H663NLWF , NVMFS6B14NL , NVMFS6B75NL , 18N50 , NVMFS6H800NL , NVMFS6H801N , NVMFS6H801NL , NVMFS6H818N , NVMFS6H818NL , NVMFS6H824N , NVMFS6H824NL , NVMFS6H836N .

History: PZ2003EEA | FDU8796

 

 
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