NVMFS6H836N Todos los transistores

 

NVMFS6H836N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVMFS6H836N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 74 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0067 Ohm
   Paquete / Cubierta: DFN5
 

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NVMFS6H836N Datasheet (PDF)

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NVMFS6H836N

MOSFET - Power, SingleN-Channel80 V, 6.7 mW, 80 ANVMFS6H836NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H836NWF - Wettable Flank Option for Enhanced OpticalInspection80 V 6.7 mW @ 10 V 80 A AEC-Q101 Qualified

 0.1. Size:175K  onsemi
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NVMFS6H836N

MOSFET - Power, SingleN-Channel80 V, 6.2 mW, 77 ANVMFS6H836NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H836NLWF - Wettable Flank Option for Enhanced OpticalInspection6.2 mW @ 10 V80 V77 A AEC-Q101 Qualif

 6.1. Size:174K  onsemi
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NVMFS6H836N

MOSFET - Power, SingleN-Channel80 V, 19.5 mW, 30 ANVMFS6H858NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H858NLWF - Wettable Flank Option for Enhanced OpticalInspection19.5 mW @ 10 V80 V 30 A AEC-Q101 Quali

 6.2. Size:176K  onsemi
nvmfs6h824n.pdf pdf_icon

NVMFS6H836N

MOSFET - Power, SingleN-Channel80 V, 4.5 mW, 107 ANVMFS6H824NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H824NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 4.5 mW @ 10 V 107 A AEC-Q101 Qualifie

Otros transistores... NVMFS6D1N08H , NVMFS6H800NL , NVMFS6H801N , NVMFS6H801NL , NVMFS6H818N , NVMFS6H818NL , NVMFS6H824N , NVMFS6H824NL , IRFZ46N , NVMFS6H836NL , NVMFS6H848N , NVMFS6H848NL , NVMFS6H852N , NVMFS6H852NL , NVMFS6H858N , NVMFS6H858NL , NVMFS6H864N .

History: TK12A60U | IXFN73N30Q | NCE65N460I | AO4588

 

 
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