NVMFS6H848N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVMFS6H848N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 73 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 57 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 33 nS
Cossⓘ - Capacitancia de salida: 170 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0094 Ohm
Encapsulados: DFN5
Búsqueda de reemplazo de NVMFS6H848N MOSFET
- Selecciónⓘ de transistores por parámetros
NVMFS6H848N datasheet
..1. Size:177K onsemi
nvmfs6h848n.pdf 
MOSFET - Power, Single N-Channel 80 V, 9.4 mW, 64 A NVMFS6H848N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H848NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 80 V 9.4 mW @ 10 V 64 A AEC-Q101 Qualified
0.1. Size:176K onsemi
nvmfs6h848nl.pdf
MOSFET - Power, Single N-Channel 80 V, 8.8 mW, 59 A NVMFS6H848NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H848NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 8.8 mW @ 10 V AEC-Q101 Qualified and PPAP
6.1. Size:174K onsemi
nvmfs6h858nl.pdf
MOSFET - Power, Single N-Channel 80 V, 19.5 mW, 30 A NVMFS6H858NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H858NLWF - Wettable Flank Option for Enhanced Optical Inspection 19.5 mW @ 10 V 80 V 30 A AEC-Q101 Quali
6.2. Size:176K onsemi
nvmfs6h824n.pdf
MOSFET - Power, Single N-Channel 80 V, 4.5 mW, 107 A NVMFS6H824N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H824NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 80 V 4.5 mW @ 10 V 107 A AEC-Q101 Qualifie
6.3. Size:174K onsemi
nvmfs6h818n.pdf
NVMFS6H818N MOSFET Power, Single N-Channel 80 V, 3.7 mW, 123 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H818NWF - Wettable Flank Option for Enhanced Optical Inspection 80 V 3.7 mW @ 10 V 123 A AEC-Q101 Qualif
6.4. Size:172K onsemi
nvmfs6h801nl.pdf
MOSFET - Power, Single N-Channel 80 V, 2.7 mW, 160 A NVMFS6H801NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H801NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 2.7 mW @ 10 V AEC-Q101 Qualified and PPA
6.5. Size:178K onsemi
nvmfs6h852n.pdf
MOSFET - Power, Single N-Channel 80 V, 14.2 mW, 43 A NVMFS6H852N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H852NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 80 V 14.2 mW @ 10 V 43 A AEC-Q101 Qualifie
6.6. Size:180K onsemi
nvmfs6h864n.pdf
MOSFET - Power, Single N-Channel 80 V, 32 mW, 23 A NVMFS6H864N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H864NWF - Wettable Flank Option for Enhanced Optical 80 V 32 mW @ 10 V 23 A Inspection AEC-Q101 Qualified an
6.7. Size:172K onsemi
nvmfs6h818nl.pdf
MOSFET - Power, Single N-Channel 80 V, 3.2 mW, 135 A NVMFS6H818NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H818NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 3.2 mW @ 10 V AEC-Q101 Qualified and PPA
6.8. Size:203K onsemi
nvmfs6h801n.pdf
MOSFET Power, Single, N-Channel 80 V, 2.8 mW, 157 A NVMFS6H801N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H801NWF - Wettable Flank Option for Enhanced Optical Inspection 80 V 2.8 mW @ 10 V 157 A AEC-Q101 Quali
6.9. Size:196K onsemi
nvmfs6h800nl.pdf
NVMFS6H800NL Power MOSFET Single N-Channel, 80 V, 1.9 mW, 224 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS6H800NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable The
6.10. Size:175K onsemi
nvmfs6h836nl.pdf
MOSFET - Power, Single N-Channel 80 V, 6.2 mW, 77 A NVMFS6H836NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H836NLWF - Wettable Flank Option for Enhanced Optical Inspection 6.2 mW @ 10 V 80 V 77 A AEC-Q101 Qualif
6.11. Size:176K onsemi
nvmfs6h836n.pdf
MOSFET - Power, Single N-Channel 80 V, 6.7 mW, 80 A NVMFS6H836N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H836NWF - Wettable Flank Option for Enhanced Optical Inspection 80 V 6.7 mW @ 10 V 80 A AEC-Q101 Qualified
6.12. Size:175K onsemi
nvmfs6h824nl.pdf
MOSFET - Power, Single N-Channel 80 V, 4 mW, 110 A NVMFS6H824NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H824NLWF - Wettable Flank Option for Enhanced Optical Inspection 4 mW @ 10 V 80 V 110 A AEC-Q101 Qualified
6.13. Size:173K onsemi
nvmfs6h864nl.pdf
MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NVMFS6H864NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H864NLWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 29 mW @ 10 V AEC-Q101 Qualified and PPAP C
6.14. Size:178K onsemi
nvmfs6h852nl.pdf
MOSFET - Power, Single N-Channel 80 V, 13.1 mW, 42 A NVMFS6H852NL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS6H852NLWF - Wettable Flank Option for Enhanced Optical Inspection 13.1 mW @ 10 V 80 V 42 A AEC-Q101 Quali
6.15. Size:178K onsemi
nvmfs6h858n.pdf
MOSFET - Power, Single N-Channel 80 V, 20.7 mW, 32 A NVMFS6H858N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H858NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 80 V 20.7 mW @ 10 V 32 A AEC-Q101 Qualifie
Otros transistores... NVMFS6H801N, NVMFS6H801NL, NVMFS6H818N, NVMFS6H818NL, NVMFS6H824N, NVMFS6H824NL, NVMFS6H836N, NVMFS6H836NL, 18N50, NVMFS6H848NL, NVMFS6H852N, NVMFS6H852NL, NVMFS6H858N, NVMFS6H858NL, NVMFS6H864N, NVMFS6H864NL, NVMTS0D4N04CL
