NVMFS6H858NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVMFS6H858NL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 34 nS
Cossⓘ - Capacitancia de salida: 82 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0195 Ohm
Paquete / Cubierta: DFN5
Búsqueda de reemplazo de NVMFS6H858NL MOSFET
NVMFS6H858NL Datasheet (PDF)
nvmfs6h858nl.pdf

MOSFET - Power, SingleN-Channel80 V, 19.5 mW, 30 ANVMFS6H858NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H858NLWF - Wettable Flank Option for Enhanced OpticalInspection19.5 mW @ 10 V80 V 30 A AEC-Q101 Quali
nvmfs6h858n.pdf

MOSFET - Power, SingleN-Channel80 V, 20.7 mW, 32 ANVMFS6H858NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H858NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 20.7 mW @ 10 V 32 A AEC-Q101 Qualifie
nvmfs6h852n.pdf

MOSFET - Power, SingleN-Channel80 V, 14.2 mW, 43 ANVMFS6H852NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H852NWF - Wettable Flank Option for Enhanced OpticalV(BR)DSS RDS(ON) MAX ID MAXInspection80 V 14.2 mW @ 10 V 43 A AEC-Q101 Qualifie
nvmfs6h852nl.pdf

MOSFET - Power, SingleN-Channel80 V, 13.1 mW, 42 ANVMFS6H852NLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS6H852NLWF - Wettable Flank Option for Enhanced OpticalInspection13.1 mW @ 10 V80 V 42 A AEC-Q101 Quali
Otros transistores... NVMFS6H824NL , NVMFS6H836N , NVMFS6H836NL , NVMFS6H848N , NVMFS6H848NL , NVMFS6H852N , NVMFS6H852NL , NVMFS6H858N , AON6380 , NVMFS6H864N , NVMFS6H864NL , NVMTS0D4N04CL , NVMTS0D6N04C , NVMTS0D7N04C , NVMTS0D7N04CL , NVMTS0D7N06CL , NVMYS4D6N04CL .
History: HAT2188WP | AON6764 | IXTQ170N10P | AUIRFN8405 | TSM2318CX | PTP20N65A | BRCS3415MC
History: HAT2188WP | AON6764 | IXTQ170N10P | AUIRFN8405 | TSM2318CX | PTP20N65A | BRCS3415MC



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