NVTFS002N04C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVTFS002N04C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 136 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 77 nS
Cossⓘ - Capacitancia de salida: 1230 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
Paquete / Cubierta: WDFN8
NVTFS002N04C Datasheet (PDF)
nvtfs002n04c.pdf

NVTFS002N04CMOSFET Power, SingleN-Channel40 V, 2.4 mW, 136 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS002N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 2.4 mW @ 10 V 136 A These
nvtfs002n04cl.pdf

NVTFS002N04CLMOSFET Power, SingleN-Channel40 V, 2.2 mW, 142 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFWS002N04CL - Wettable Flanks Product2.2 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 142 A3.5 mW
nvtfs003n04c.pdf

NVTFS003N04CMOSFET Power, SingleN-Channel40 V, 3.5 mW, 103 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS003N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 3.5 mW @ 10 V 103 A These
nvtfs008n04c.pdf

NVTFS008N04CPower MOSFET40 V, 7.1 mW, 48 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS008N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IPP120P04P4L-03 | SQS405ENW | LBSS84DW1T1G | VN0335N5 | SFG100N08GF | FDS3612 | IXTT48P20P
History: IPP120P04P4L-03 | SQS405ENW | LBSS84DW1T1G | VN0335N5 | SFG100N08GF | FDS3612 | IXTT48P20P



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