NVTFS008N04C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVTFS008N04C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 48 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 335 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: WDFN8

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NVTFS008N04C datasheet

 ..1. Size:184K  onsemi
 nvtfs008n04c.pdf pdf_icon

NVTFS008N04C

NVTFS008N04C Power MOSFET 40 V, 7.1 mW, 48 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS008N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH

 7.1. Size:267K  onsemi
 nvtfs002n04c.pdf pdf_icon

NVTFS008N04C

NVTFS002N04C MOSFET Power, Single N-Channel 40 V, 2.4 mW, 136 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS002N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 2.4 mW @ 10 V 136 A These

 7.2. Size:200K  onsemi
 nvtfs003n04c.pdf pdf_icon

NVTFS008N04C

NVTFS003N04C MOSFET Power, Single N-Channel 40 V, 3.5 mW, 103 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS003N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 3.5 mW @ 10 V 103 A These

 7.3. Size:192K  onsemi
 nvtfs005n04c.pdf pdf_icon

NVTFS008N04C

NVTFS005N04C Power MOSFET 40 V, 5.6 mW, 69 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS005N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH

MOSTRAR MÁS

Otros transistores... NVMTS0D7N06CL, NVMYS4D6N04CL, NVR5124PL, NVTFS002N04C, NVTFS002N04CL, NVTFS003N04C, NVTFS004N04C, NVTFS005N04C, IRFB7545, NVTFS010N10MCL, NVTFS014P04M8L, NVTFS015N04C, NVTFS016N06C, NVTFS020N06C, NVTFS024N06C, NVTFS030N06C, NVTFS052P04M8L