NVTFS052P04M8L Todos los transistores

 ..1. Size:206K  onsemi
 nvtfs052p04m8l.pdf

MOSFET - Power, Single P-Channel -40 V, 69 mW, -13.2 A NVTFS052P04M8L Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS052P04M8L - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 69 mW @ -10 V These Device

 8.1. Size:267K  onsemi
 nvtfs002n04c.pdf

NVTFS002N04C MOSFET Power, Single N-Channel 40 V, 2.4 mW, 136 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS002N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 2.4 mW @ 10 V 136 A These

 8.2. Size:320K  onsemi
 nvtfs010n10mcl.pdf

NVTFS010N10MCL MOSFET - Power, Single N-Channel 100 V, 10.6 mW, 57.8 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFWS010N10MCLTAG - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 10.6 mW @ 10 V 100 V 57.8

 8.3. Size:200K  onsemi
 nvtfs003n04c.pdf

NVTFS003N04C MOSFET Power, Single N-Channel 40 V, 3.5 mW, 103 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS003N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 3.5 mW @ 10 V 103 A These

 8.4. Size:201K  onsemi
 nvtfs015n04c.pdf

NVTFS015N04C MOSFET Power, Single N-Channel 40 V, 17.3 mW, 27 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS015N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 17.3 mW @ 10 V 27 A These

 8.5. Size:184K  onsemi
 nvtfs008n04c.pdf

NVTFS008N04C Power MOSFET 40 V, 7.1 mW, 48 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS008N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH

 8.6. Size:269K  onsemi
 nvtfs024n06c.pdf

MOSFET - Power, Single N-Channel, m8FL 60 V, 22.6 mW, 24 A NVTFS024N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFWS024N06C - Wettable Flank Option for Enhanced Optical Inspection 60 V 22.6 mW @ 10 V 24 A AEC-

 8.7. Size:192K  onsemi
 nvtfs005n04c.pdf

NVTFS005N04C Power MOSFET 40 V, 5.6 mW, 69 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS005N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH

 8.8. Size:268K  onsemi
 nvtfs016n06c.pdf

MOSFET - Power, Single N-Channel, m8FL 60 V, 16.3 mW, 32 A NVTFS016N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS016N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(on) MAX ID MAX Inspection 60 V 16.3 mW @ 10 V 32 A AEC-

 8.9. Size:217K  onsemi
 nvtfs014p04m8l.pdf

MOSFET Power, Single, P-Channel -40 V, 13.8 mW, -49 A NVTFS014P04M8L Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS014P04M8L - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 13.8 mW @ -10 V These D

 8.10. Size:269K  onsemi
 nvtfs030n06c.pdf

MOSFET - Power, Single N-Channel, m8FL 60 V, 29.7 mW, 19 A NVTFS030N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS030N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(on) MAX ID MAX Inspection 60 V 29.7 mW @ 10 V 19 A AEC-

 8.11. Size:266K  onsemi
 nvtfs002n04cl.pdf

NVTFS002N04CL MOSFET Power, Single N-Channel 40 V, 2.2 mW, 142 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFWS002N04CL - Wettable Flanks Product 2.2 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 40 V 142 A 3.5 mW

 8.12. Size:268K  onsemi
 nvtfs020n06c.pdf

MOSFET - Power, Single N-Channel, m8FL 60 V, 20.3 mW, 27 A NVTFS020N06C Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFWS020N06C - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(on) MAX ID MAX Inspection 60 V 20.3 mW @ 10 V 27 A AEC-

 8.13. Size:202K  onsemi
 nvtfs004n04c.pdf

NVTFS004N04C MOSFET Power, Single N-Channel 40 V, 4.9 mW, 77 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS004N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 4.9 mW @ 10 V 77 A These De