NVTFS5C454NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVTFS5C454NL
Código: 454L_54LW
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 55 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 85 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 8.2 nC
Tiempo de subida (tr): 100 nS
Conductancia de drenaje-sustrato (Cd): 590 pF
Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
Paquete / Cubierta: WDFN8
Búsqueda de reemplazo de MOSFET NVTFS5C454NL
NVTFS5C454NL Datasheet (PDF)
nvtfs5c454nl.pdf
NVTFS5C454NLPower MOSFET40 V, 4.0 mW, 85 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C454NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro
nvtfs5c453nl.pdf
MOSFET Power, SingleN-Channel40 V, 3.1 mW, 107 ANVTFS5C453NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS5C453NLWF - Wettable Flanks Product3.1 mW @ 10 V40 V107 A AEC-Q101 Qualified and PPAP Capable5.2 mW
nvtfs5c471nl.pdf
MOSFET Power, SingleN-Channel40 V, 9.0 mW, 41 ANVTFS5C471NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C471NLWF - Wettable Flanks Product9.0 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 41 A These
nvtfs5c460nl.pdf
MOSFET Power, SingleN-Channel40 V, 4.8 mW, 74 ANVTFS5C460NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C460NLWF - Wettable Flanks Product4.8 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 74 A These
nvtfs5c466nl.pdf
NVTFS5C466NLMOSFET - Power, SingleN-Channel40 V, 7.3 mW, 51 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C466NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable7.3 mW @ 10 V These Devices are
nvtfs5c478nl.pdf
MOSFET Power, SingleN-Channel40 V, 14 mW, 26 ANVTFS5C478NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C478NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable14 mW @ 10 V These Devices are
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