PJM2309PSC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PJM2309PSCP-Channel Power MOSFETSOT-23-3 Features VDS= -60V I = -4AD RDS(ON)= 180m(max) @-10V2 Halogen and Antimony Free31Applications1. Gate 2.Source 3.Drain Load Switch and in PWM ApplicationsMarking: Q9 Power ManagementSchematic DiagramDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.

PJM2309PSAP-Channel Power MOSFETSOT-23Features VDS= -60V I = -2.0AD RDS(ON)= 200m(max) @-10V Halogen and Antimony Free1. Gate 2.Source 3.DrainApplicationsMarking: S9 Load Switch and in PWM ApplicationsSchematic Diagram Power Management Drain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter

PJM2301PSA-S P- Enhancement Mode Field Effect Transistor Features SOT-23 VDS= -20V I = -2AD R =120m (typ) @ V =-2.5VDS(ON) GSR =88m (typ) @ V =-4.5VDS(ON) GS High power and current handing capability Halogen and Antimony Free Surface mount package1. Gate 2.Source 3.DrainMarking : S01Drain 3 Applications Battery protection Load s

PJM2305PSAP-Channel Power MOSFETSOT-23Features Fast switching Low gate charge and RDS(ON) Low reverse transfer capacitances1. Gate 2.Source 3.Drain Marking: S5Application Schematic Diagram Load switch and in PWM applicatopnsDrain3 Power management1GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Paramete

PJM2300NSA-L N-Channel Enhancement Mode Power MOSFETFeatures SOT-23 Excellent R and Low Gate ChargeDS(ON) VDS= 20V I = 5.5A DR

PJM2302NSAN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: M22 Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unless

PJM2301PSAP- Enhancement Mode Field Effect TransistorFeatures High power and current handing capabilitySOT-23 Halogen free product is acquired Surface mount package1. Gate 2.Source 3.DrainApplications Marking: M01 Battery protection Schematic Diagram Load switchDrain3 Power management1GateSource2Absolute Maximum Ratings Ratings at TA =25

PJM2302NSA-SN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: 22S Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unle

PJM2300NSA N-Channel MOSFETFeature SOT-23 TrenchFET Power MOSFET Excellent R and Low Gate ChargeDS(on)Applications 1. Gate 2.Source 3.Drain Load Switch for Portable DevicesMarking: M02 DC/DC ConverterSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TA =25 unless otherwise specified. Parameter Symbol Maximum Units