PTA20N65A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PTA20N65A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 65 nC
   trⓘ - Tiempo de subida: 190 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO-220F

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PTA20N65A Datasheet (PDF)

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ptp20n65a pta20n65a.pdf

PTP20N65A PTA20N65A 650V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 650V 0.38 20A RDS(ON),typ.=0.38 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G TV Main Power D S G D SMPS Power Supply S LCD Panel Power TO-220 TO-220F Ordering Information Packa

7.1. Size:869K pipsemi
ptp20n60a pta20n60a.pdf

PTP20N60A PTA20N60A 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 600V 0.32 20A RDS(ON),typ.=0.32 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications CRT,TV/Monitor G D S Other Applications G D S Ordering Information TO-220 TO-220F Part Number Pa

7.2. Size:624K pipsemi
ptp20n60 pta20n60.pdf

PTP20N60 PTA20N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology600V 0.35 20A RDS(ON),typ.=0.35 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications CRT,TV/Monitor Other ApplicationsOrdering Information Part Number Package Brand PTP20N60 TO-220PTA20N60 TO-2

8.1. Size:1028K pipsemi
ptp20n70a pta20n70a.pdf

PTP20N70A PTA20N70A 700V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 700V 0.50 20A RDS(ON),typ.=0.50 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor TV Main Power G G SMPS Power Supply D D S S LCD Panel Power TO-220 TO-220F Ordering Information P

8.2. Size:573K pipsemi
ptp20n40b pta20n40b.pdf

PTP20N40B PTA20N40B 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.24 20A RDS(ON),typ.=0.24 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Power Supply G D S G D LCD Panel Power S Ordering Information TO-220 TO-220F Part Number P

8.3. Size:633K pipsemi
ptp20n50a pta20n50a.pdf

PTP20N50A PTA20N50A 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 500V 0.24 20A RDS(ON),typ.=0.24 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Power Supply G LCD Panel Power D S G D S Ordering Information Part Number Package Brand T

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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