D2N65 Todos los transistores

 ..1. Size:1120K  cn wxdh
 d2n65.pdf

D2N65 2A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 2A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =4.6 Fast switching ESD improved capability

 ..2. Size:253K  cn shandong jingdao microelectronics
 d2n65.pdf

Jingdao Microelectronics co.LTD D2N65 2A, 650V N-CHANNEL POWER MOSFET TO-252W DESCRIPTION The D2N65 is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usu

 0.1. Size:693K  blue-rocket-elect
 brd2n65.pdf

BRD2N65(BRCS2N65D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

 0.2. Size:255K  winsemi
 wfd2n65l.pdf

WFD2N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 2.0A,650V,R (Max5.0 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 8.6nC) Fast Switching Capability G 100%Avalanche Tested Maximum Junction Temperature Range(150 ) S General Description This Power MOSFET is produced

 0.3. Size:964K  feihonltd
 fhf2n65a fhp2n65a fhu2n65a fhd2n65a.pdf

N N-CHANNEL MOSFET FHF2N65A/FHP2N65A/FHU2N65A/FHD2N65A MAIN CHARACTERISTICS FEATURES ID 2A Low gate charge VDSS 650V Crss ( 6pF) Low Crss (typical 6pF ) Rdson-typ @Vgs=10V 4.0 Fast switching Qg-typ 8.0nC 100% 100% avalanche tested dv/

 0.4. Size:979K  feihonltd
 fhp2n65d fhf2n65d fhu2n65d fhd2n65d.pdf

N N-CHANNEL MOSFET FHP2N65D/FHF2N65D/FHU2N65D/FHD2N65D MAIN CHARACTERISTICS FEATURES ID 2A Low gate charge VDSS 650V Crss ( 6pF) Low Crss (typical 6pF ) Rdson-typ @Vgs=10V 4.0 Fast switching Qg-typ 8.0nC 100% 100% avalanche tested dv/

 0.5. Size:918K  maple semi
 sld2n65uz slu2n65uz.pdf

SLD2N65UZ / SLU2N65UZ 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 1.9A, 650V, RDS(on)typ = 3.45 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 5.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchin

 0.6. Size:688K  samwin
 swn2n65k swd2n65k.pdf

SW2N65K N-channel Enhanced mode TO-251N/TO-252 MOSFET Features BVDSS 650V TO-252 TO-251N ID 2A High ruggedness Low RDS(ON) (Typ 1.9 )@VGS=10V RDS(ON) 1.9 Low Gate Charge (Typ 7.8nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 Application Power Supply,LED Boost 1 3 3 3 1. Gate 2. Drain 3. Source General Descrip

 0.7. Size:257K  semihow
 hfd2n65s.pdf

Mar 2010 BVDSS = 650 V RDS(on) typ = 5.0 HFD2N65S / HFU2N65S ID = 1.6 A 650V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD2N65S HFU2N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC (Typ.

 0.8. Size:199K  semihow
 hfd2n65u.pdf

Nov 2013 BVDSS = 650 V RDS(on) typ = 5 HFD2N65U / HFU2N65U ID = 1.8 A 650V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N65U HFU2N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (Ty

 0.9. Size:449K  trinnotech
 tmd2n65az tmu2n65az.pdf

TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

 0.10. Size:892K  huake
 smd2n65.pdf

SMD2N65 650V N-Channnel MOSFET Features 2.0A, 650V, R =4.5 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value

 0.11. Size:1015K  lonten
 lnd2n65 lnc2n65 lng2n65 lnh2n65.pdf

LND2N65/LNC2N65/LNG2N65/LNH2N65 Lonten N-channel 650V, 2A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 2A resulting device has low conduction resistance, RDS(on),max 5.2 superior switching performance and high avalance Qg,typ 10.2 nC energy. Features Low RDS(on) Low gate charge

 0.12. Size:1401K  lonten
 lnd2n65 lnc2n65 lng2n65 lnh2n65 lnu2n65.pdf

LND2N65/LNC2N65/LNG2N65/LNH2N65/LNU2N65 Lonten N-channel 650V, 2A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 2A D resulting device has low conduction resistance, R 5.2 DS(on),max superior switching performance and high avalance Q 10.2 nC g,typ energy. Features Low R DS(on) Low gate

 0.13. Size:892K  cn marching-power
 mpva2n65bk mpvu2n65bk mpvd2n65bk.pdf

MPVX2N65BK Series Power MOSFET MPSW60M041 FEATURES APPLICATIONS BVDSS 650V, ID=2A Switch Mode Power Supply (SMPS) RDS(on) 4.8 (Max) @VGS=10V Uninterruptible Power Supply (UPS) Very Low FOM (RDS(on) *Qg) Power Factor Correction (PFC) Excellent stability and uniformity AC to DC Converters D G TO-252 TO-220F S TO-251 Ordering Information Type NO. Mark