D4N65 Todos los transistores

 ..1. Size:1260K  cn wxdh
 d4n65.pdf

D4N65 4A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 4.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) = 2.4 2 Features Fast switching ESD impro

 ..2. Size:252K  cn shandong jingdao microelectronics
 d4n65.pdf

Jingdao Microelectronics co.LTD D4N65 4A, 650V N-CHANNEL POWER MOSFET TO-252W DESCRIPTION The D4N65 is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usu

 0.1. Size:438K  blue-rocket-elect
 brd4n65.pdf

BRD4N65 Rev.F Aug.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications These devices are well suited for po

 0.2. Size:981K  blue-rocket-elect
 brd4n65s.pdf

BRD4N65S Rev.A Dec.-2023 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , , Low gate charge, low crss, fast switching,HF Product. Have good Electromagnetic Interference porfo

 0.3. Size:354K  silan
 svd4n65t svd4n65f.pdf

SVD4N65T/SVD4N65F 4A 650V N 2 SVD4N65T/F N MOS S-RinTM VDMOS 1 3 1. 2. 3. AC-DC DC-DC H PMW 1 1 2 2 3 3 TO-220F-3L TO-220-3L 4A 650V RDS(on) =2.3 @VGS=10V dv/dt

 0.4. Size:1197K  feihonltd
 fhu4n65d fhd4n65d fhp4n65d fhf4n65d.pdf

N N-CHANNEL MOSFET FHU4N65D/FHD4N65D/FHP4N65D/FHF4N65D MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

 0.5. Size:1084K  feihonltd
 fhu4n65b fhp4n65b fhd4n65b fhf4n65b.pdf

 0.6. Size:1195K  feihonltd
 fhu4n65a fhp4n65a fhd4n65a fhf4n65a.pdf

N N-CHANNEL MOSFET FHU4N65A/FHP4N65A/FHD4N65A/FHF4N65A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.9 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

 0.7. Size:1331K  feihonltd
 fhu4n65e fhd4n65e fhp4n65e fhf4n65e.pdf

N N-CHANNEL MOSFET FHU4N65E/FHD4N65E/FHP4N65E/FHF4N65E MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650 V Crss ( 4.5pF) Low Crss (typical 4.5pF ) Rdson-typ @Vgs=10V 2.1 Fast switching Qg-typ 18nC 100% 100% avalanche tested dv

 0.8. Size:1007K  samwin
 swf4n65k2 swn4n65k2 swd4n65k2.pdf

SW4N65K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 ID 4 A High ruggedness Low RDS(ON) (Typ 1.10 )@VGS=10V RDS(ON) 1.10 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 Application LED, Charger, Adaptor 2 2 3 3 3 1 1. Gate 2

 0.9. Size:840K  samwin
 swf4n65k swi4n65k swd4n65k.pdf

SW4N65K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 1 )@VGS=10V Low Gate Charge (Typ13 nC) RDS(ON) 1 Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 Application Adapter,LED,Charger, 2 2 2 3 3 3 TV-Power 1 1. Gate 2. Drain 3. Sour

 0.10. Size:913K  samwin
 swn4n65dd swnc4n65dd swf4n65dd swmn4n65dd swd4n65dd swyn4n65dd.pdf

SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2.4 )@VGS=10V RDS(ON) 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2

 0.11. Size:1095K  samwin
 swf4n65da swn4n65da swd4n65da swnb4n65da.pdf

SW4N65DA N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 TO-251NX-S4 ID 4A High ruggedness Low RDS(ON) (Typ 3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charger, Adaptor, 3 3 3 LED, TV-Pow

 0.12. Size:1049K  samwin
 swf4n65d swn4n65d swsi4n65d swmi4n65d swui4n65d swd4n65d sws4n65d swb4n65d swp4n65d swmqi4n65d.pdf

SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2 )@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) 2 3 2 3 3 3 3 Improved dv/d

 0.13. Size:453K  trinnotech
 tmd4n65az tmu4n65az.pdf

TMD4N65AZ(G)/TMU4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A

 0.14. Size:475K  trinnotech
 tmd4n65z tmu4n65z.pdf

TMD4N65Z(G)/TMU4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

 0.15. Size:2041K  anbon
 au4n65s ad4n65s at4n65s af4n65s ak4n65s ag4n65s.pdf

 0.16. Size:964K  huake
 smd4n65.pdf

SMD4N65 650V N-Channnel MOSFET Features 4.0A, 650V, R =2.2 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value

 0.17. Size:1386K  huashuo
 hsd4n65 hsu4n65 hsp4n65 hsf4n65.pdf

HS4N65 650V 4A N-Channel Planar MOSFET FEATURES General Description RDSON 3.0 @Vgs=10V, Id=2A HS4N65 is Fortunatus high voltage MOSFET family based on Ultra Low gate Charge(typical 13 nC) advanced planar stripe DMOS technology. This advanced Low Crss (typical 5pF) MOSFET family has optimized on-state resistance, and also Fast switching capability provides s

 0.18. Size:1098K  lonten
 lnc4n65 lnd4n65 lng4n65 lnh4n65 lnf4n65.pdf

LNC4N65 LND4N65 LNG4N65 LNH4N65 LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate

 0.19. Size:1056K  cn marching-power
 mpva4n65f mpvu4n65f mpvd4n65f.pdf

MPVX4N65F Series Power MOSFET MPSW60M041 FEATURES APPLICATIONS l BVDSS 650V, ID=4A l Switch Mode Power Supply (SMPS) l RDS(on) 2.8 (Max) @VGS=10V l Uninterruptible Power Supply (UPS) l Very Low FOM (RDS(on) *Qg) l Power Factor Correction (PFC) l Excellent stability and uniformity l AC to DC Converters D G TO-220F TO-251 TO-252 S Ordering Information Type NO. Marking Pack

 0.20. Size:4470K  dyelec
 dmp4n65 dmd4n65 dmt4n65 dmf4n65 dmk4n65 dmg4n65.pdf

4N65 650V N-Channel Power MOSFET RDS(ON)