3080K Todos los transistores

 ..1. Size:456K  cn shenzhen fuman elec
 3080k.pdf

FM , FM WWW.SZLCSC.COM, SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3080K ( S&CIC1775) N-Channel Trench Power MOSFET Description Features Application 30V,80A Load Switch R =3.8m

 0.1. Size:903K  rohm
 sct3080kl.pdf

SCT3080KL N-channel SiC power MOSFET Datasheet Outline TO-247N VDSS 1200V RDS(on) (Typ.) 80m ID 31A (3) PD 165W (2) (1) Inner circuit (2) Features (1) Gate (2) Drain 1) Low on-resistance (3) Source *1 (1) 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery (3) 4) Easy to parallel Packaging specifications 5) Simple to drive Packing Tube

 0.2. Size:936K  rohm
 sct3080klhr.pdf

SCT3080KLHR Automotive Grade N-channel SiC power MOSFET Datasheet lOutline TO-247N VDSS 1200V RDS(on) (Typ.) 80m 31A ID*1 PD (3) 165W (2) (1) lInner circuit lFeatures (1) Gate 1) Qualified to AEC-Q101 (2) Drain (3) Source 2) Low on-resistance *Body Diode 3) Fast switching speed 4) Fast reverse recovery Please note Driver Source and Power Source are 5) Easy to p

 0.3. Size:384K  ncepower
 nce3080k.pdf

Pb Free Product http //www.ncepower.com NCE3080K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 0.4. Size:495K  ncepower
 nce3080ka.pdf

 0.5. Size:285K  ascend
 asdm3080kq.pdf

ASDM3080KQ 30V N-CHANNEL MOSFET Product Summary Features 30V,80A R =4.8m (Typ.) @ V =10V V DS 30 V DS(ON) GS R =7.5m (Typ.) @ V =4.5V DS(ON) GS Advanced Trench Technology R DS(on),TYP@ VGS=10 V 4.8 m Provide Excellent R and Low Gate Charge DS(ON) 80 A ID Application Load Switch PWM Application Absolute Maximum Ratings (T =25 unless othe

 0.6. Size:444K  cn sino-ic
 se3080a se3080k.pdf

SE3080A/K N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =30V DS operation voltage. This device is suitable for R =4.5m @V =10V(SE3080A) DS(ON) GS using as a load switch or in PWM applications. R =4.5m @V =10V(SE3080K) DS(ON) GS Sim

 0.7. Size:840K  cn vbsemi
 nce3080ka.pdf

NCE3080KA www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABS