3080K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.3080K (S&CIC1775) N-Channel Trench Power MOSFETDescriptionFeatures Application 30V,80A Load Switch R =3.8m

SCT3080KLN-channel SiC power MOSFET DatasheetOutline TO-247NVDSS1200VRDS(on) (Typ.)80mID31A(3) PD165W (2) (1) Inner circuit(2)Features(1) Gate(2) Drain1) Low on-resistance(3) Source*1(1)2) Fast switching speed*1 Body Diode3) Fast reverse recovery(3)4) Easy to parallelPackaging specifications5) Simple to drivePacking Tube

SCT3080KLHRAutomotive Grade N-channel SiC power MOSFET DatasheetlOutlineTO-247NVDSS1200VRDS(on) (Typ.)80m31AID*1PD (3) 165W(2) (1) lInner circuitlFeatures(1) Gate 1) Qualified to AEC-Q101(2) Drain (3) Source 2) Low on-resistance*Body Diode 3) Fast switching speed4) Fast reverse recoveryPlease note Driver Source and Power Source are5) Easy to p

Pb Free Producthttp://www.ncepower.com NCE3080KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE3080KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

ASDM3080KQ30V N-CHANNEL MOSFETProduct SummaryFeatures 30V,80A R =4.8m (Typ.) @ V =10V V DS 30 VDS(ON) GS R =7.5m (Typ.) @ V =4.5VDS(ON) GS Advanced Trench Technology R DS(on),TYP@ VGS=10 V 4.8 m Provide Excellent R and Low Gate ChargeDS(ON)80 AIDApplication Load Switch PWM ApplicationAbsolute Maximum Ratings (T =25 unless othe

SE3080A/KN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =30VDSoperation voltage. This device is suitable for R =4.5m @V =10V(SE3080A)DS(ON) GSusing as a load switch or in PWM applications. R =4.5m @V =10V(SE3080K)DS(ON) GS Sim

NCE3080KAwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABS