STW16N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STW16N40
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 180 W
Tensión drenaje-fuente (Vds): 400 V
Corriente continua de drenaje (Id): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.3 Ohm
Empaquetado / Estuche: TO247
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STW16N40 Datasheet (PDF)
4.1. stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5 2.pdf 
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STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.270 ?, 12 A MDmesh V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V < 0.299 ? 12 A STU16N65M5 STW16N65M5 3 DPAK worldwide best RDS(on) 2 3 1 2 1 Higher VDSS ratin
4.2. stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5.pdf Size:1053K _st
STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.240 ?, 12 A MDmesh V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V < 0.279 ? 12 A STU16N65M5 STW16N65M5 3 DPAK worldwide best RDS(on) 2 3 1 2 1 Higher VDSS ratin
4.3. stf16nk60z stp16nk60z stw16nk60z.pdf Size:745K _st
STF16NK60Z STP16NK60Z, STW16NK60Z N-channel 600 V, 038 ?, 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS(on) Type VDSS ID Pw max STF16NK60Z 600 V < 0.42 ? 14 A(1) 40 W 3 3 2 2 1 STP16NK60Z 600 V < 0.42 ? 14 A 190 W 1 TO-220 STW16NK60Z 600 V < 0.42 ? 14 A 190 W TO-220FP 1. Limited by package. 100% avalanche tested 3 Extremely high dv/dt
4.4. stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf Size:577K _st
STB16NM50N - STF/I16NM50N STP16NM50N - STW16NM50N N-channel 500 V - 0.21 ? - 15 A MDmesh II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP Features VDSS RDS(on) Type ID 3 (@Tjmax) max 3 1 2 1 STB16NM50N 550 V 0.26 ? 15 A D?PAK I?PAK STI16NM50N 550 V 0.26 ? 15 A 3 STF16NM50N 550 V 0.26 ? 15 A (1) 2 1 STP16NM50N 550 V 0.26 ? 15 A TO-247 STW16NM50N 550 V 0.26 ? 15 A 3
4.5. stw16nb40.pdf Size:73K _st2
STW18NB40 STH18NB40FI N-CHANNEL 400V - 0.19? - 18.4A TO-247/ISOWATT218 PowerMESH? MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STW18NB40 400 V < 0.26 ? 18.4 A STH18NB40FI 400 V < 0.26 ? 12.4A TYPICAL R = 0.19 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest hig
4.6. stw16nb60.pdf Size:252K _st2
STW16NB60 N-CHANNEL 600V - 0.3? - 16ATO-247 PowerMesh MOSFET TYPE VDSS RDS(on) ID STW16NB60 600V < 0.35 ? 16 A TYPICAL RDS(on) = 0.3? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 GATE CHARGE MINIMIZED 2 1 TO-247 DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an ad- vanced family of po
4.7. stw16na40.pdf Size:73K _st2
STW16NA40 STH16NA40FI N - CHANNEL 400V - 0.21? - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS PRELIMINARY DATA TYPE VDSS RDS(on) ID STW16NA40 400 V < 0.3 ? 16 A 400V < 0.3 ? 10 A STH16NA40FI TYPICAL R = 0.21 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 APPLICATION ORIENTED 2 2 1 CHARACTERIZATION 1 APPLICATIONS TO
4.8. stw16na60.pdf Size:75K _st2
STW16NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STW16NA60 600 V < 0.4 ? 16 A TYPICAL R = 0.33 ? DS(on) 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCE 3 2 GATE CHARGE MINIMIZED 1 REDUCED VOLTAGE SPREAD TO-247 APPLICATIONS HIGH CURRENT, HIGH
Otros transistores... STV7NA40 , STV7NA60 , STV8NA50 , STW12N60 , STW12NA50 , STW14N50 , STW15N50 , STW15NA50 , APT50M38JFLL , STW20NA50 , STW55N10 , STW60N10 , STW75N06 , STW80N05 , STW8N80 , STW9NA60 , TA17632 .
