PDC3803R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDC3803R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 27.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 43 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12.5 nS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
Paquete / Cubierta: PPAK5X6
Búsqueda de reemplazo de MOSFET PDC3803R
PDC3803R Datasheet (PDF)
pdc3803r.pdf
30V N-Channel MOSFETs PDC3803R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 9.5m 43A advanced technology has been especially tailored to Q2 30V 4.2m 85A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features
pdc3801r.pdf
30V N-Channel MOSFETs PDC3801R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 30V 9m 55A advanced technology has been especially tailored to Q2 30V 6m 80A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features av
pdc3810v.pdf
PDC3810V 30V Dual N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 13m 35A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,35A, RDS(ON) =13m @VGS = 10V performance, and withstand h
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