PDC3960X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

30V N-Channel MOSFETs PDC3960X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 2m 165A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 165A, RDS(ON) =2m@VGS = 10V performance, and withstand high ene

30V N-Channel MOSFETs PDC3964Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 4.5m 64A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,64A, RDS(ON) =4.5m@VGS = 10V performance, and withstand high e

30V N-Channel MOSFETs PDC3964X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 4.5m 82A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,82A, RDS(ON) =4.5m@VGS = 10V performance, and withstand high e

30V N-Channel MOSFETs PDC3908X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =8.5m@VGS = 10V performance, and withstand high ene

30V N-Channel MOSFETs PDC3904Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 3.8m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 30V,80A, RDS(ON) =3.8m@VGS = 10V performance, and withstand high energ

30V P-Channel MOSFETs PDC3903Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -50A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-50A, RDS(ON) =8.5m@VGS = -10V performance, and withstand hig

30V N-Channel MOSFETs PDC3906Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 6m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =6m@VGS = 10V performance, and withstand high energy

30V P-Channel MOSFETs PDC3905Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 15m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =18m@VGS = -10V performance, and withstand high

30V N-Channel MOSFETs PDC3902X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 1.6m 130A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 130A, RDS(ON) =1.6m@VGS = 10V performance, and withstand high

30V P-Channel MOSFETs PDC3907Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 18m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =18m@VGS = -10V performance, and withstand high

30V N-Channel MOSFETs PDC3908Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 48A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,48A, RDS(ON) =8.5m@VGS = 10V performance, and withstand high ene

30V P-Channel MOSFETs PDC3903X General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-60A, RDS(ON) =8.5m@VGS = -10V performance, and withstand hig

30V N-Channel MOSFETs PDC3912Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 18m 25A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,25A, RDS(ON) =18m @VGS = 10V performance, and withstand high ener