PDC3960X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PDC3960X
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 135 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 165 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 82 nC
   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: PPAK5X6

Búsqueda de reemplazo de MOSFET PDC3960X

PDC3960X Datasheet (PDF)

..1. Size:902K potens
pdc3960x.pdf

30V N-Channel MOSFETs PDC3960X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 2m 165A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 165A, RDS(ON) =2m@VGS = 10V performance, and withstand high ene

8.1. Size:579K potens
pdc3964z.pdf

30V N-Channel MOSFETs PDC3964Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 4.5m 64A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,64A, RDS(ON) =4.5m@VGS = 10V performance, and withstand high e

8.2. Size:694K potens
pdc3964x.pdf

30V N-Channel MOSFETs PDC3964X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 4.5m 82A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,82A, RDS(ON) =4.5m@VGS = 10V performance, and withstand high e

9.1. Size:986K potens
pdc3908x.pdf

30V N-Channel MOSFETs PDC3908X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =8.5m@VGS = 10V performance, and withstand high ene

9.2. Size:301K potens
pdc3904z.pdf

30V N-Channel MOSFETs PDC3904Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 3.8m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 30V,80A, RDS(ON) =3.8m@VGS = 10V performance, and withstand high energ

9.3. Size:861K potens
pdc3903z.pdf

30V P-Channel MOSFETs PDC3903Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -50A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-50A, RDS(ON) =8.5m@VGS = -10V performance, and withstand hig

9.4. Size:538K potens
pdc3906z.pdf

30V N-Channel MOSFETs PDC3906Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 6m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =6m@VGS = 10V performance, and withstand high energy

9.5. Size:539K potens
pdc3905z.pdf

30V P-Channel MOSFETs PDC3905Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 15m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =18m@VGS = -10V performance, and withstand high

9.6. Size:902K potens
pdc3902x.pdf

30V N-Channel MOSFETs PDC3902X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 1.6m 130A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 130A, RDS(ON) =1.6m@VGS = 10V performance, and withstand high

9.7. Size:828K potens
pdc3907z.pdf

30V P-Channel MOSFETs PDC3907Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 18m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =18m@VGS = -10V performance, and withstand high

9.8. Size:822K potens
pdc3908z.pdf

30V N-Channel MOSFETs PDC3908Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 48A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,48A, RDS(ON) =8.5m@VGS = 10V performance, and withstand high ene

9.9. Size:1058K potens
pdc3903x.pdf

30V P-Channel MOSFETs PDC3903X General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-60A, RDS(ON) =8.5m@VGS = -10V performance, and withstand hig

9.10. Size:458K potens
pdc3912z.pdf

30V N-Channel MOSFETs PDC3912Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 18m 25A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,25A, RDS(ON) =18m @VGS = 10V performance, and withstand high ener

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