PDC3964X Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDC3964X 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 73.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 82 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15.8 nS
Cossⓘ - Capacitancia de salida: 300 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Encapsulados: PPAK5X6
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PDC3964X datasheet
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pdc3964x.pdf 
30V N-Channel MOSFETs PDC3964X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 4.5m 82A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,82A, RDS(ON) =4.5m @VGS = 10V performance, and withstand high e
7.1. Size:579K potens
pdc3964z.pdf
30V N-Channel MOSFETs PDC3964Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 4.5m 64A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,64A, RDS(ON) =4.5m @VGS = 10V performance, and withstand high e
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pdc3960x.pdf
30V N-Channel MOSFETs PDC3960X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 2m 165A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 165A, RDS(ON) =2m @VGS = 10V performance, and withstand high ene
9.1. Size:986K potens
pdc3908x.pdf
30V N-Channel MOSFETs PDC3908X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =8.5m @VGS = 10V performance, and withstand high ene
9.2. Size:301K potens
pdc3904z.pdf
30V N-Channel MOSFETs PDC3904Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 3.8m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 30V,80A, RDS(ON) =3.8m @VGS = 10V performance, and withstand high energ
9.3. Size:861K potens
pdc3903z.pdf
30V P-Channel MOSFETs PDC3903Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -50A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-50A, RDS(ON) =8.5m @VGS = -10V performance, and withstand hig
9.4. Size:538K potens
pdc3906z.pdf
30V N-Channel MOSFETs PDC3906Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 6m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =6m @VGS = 10V performance, and withstand high energy
9.5. Size:539K potens
pdc3905z.pdf
30V P-Channel MOSFETs PDC3905Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 15m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =18m @VGS = -10V performance, and withstand high
9.6. Size:902K potens
pdc3902x.pdf
30V N-Channel MOSFETs PDC3902X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 1.6m 130A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 130A, RDS(ON) =1.6m @VGS = 10V performance, and withstand high
9.7. Size:828K potens
pdc3907z.pdf
30V P-Channel MOSFETs PDC3907Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 18m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =18m @VGS = -10V performance, and withstand high
9.8. Size:822K potens
pdc3908z.pdf
30V N-Channel MOSFETs PDC3908Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 48A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,48A, RDS(ON) =8.5m @VGS = 10V performance, and withstand high ene
9.9. Size:1058K potens
pdc3903x.pdf
30V P-Channel MOSFETs PDC3903X General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-60A, RDS(ON) =8.5m @VGS = -10V performance, and withstand hig
9.10. Size:458K potens
pdc3912z.pdf
30V N-Channel MOSFETs PDC3912Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 18m 25A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,25A, RDS(ON) =18m @VGS = 10V performance, and withstand high ener
Otros transistores... PDC3904Z, PDC3905Z, PDC3906Z, PDC3907Z, PDC3908X, PDC3908Z, PDC3912Z, PDC3960X, 5N60, PDC3964Z, PDC8974X, PDC906Z, PDD0906, PDD3906, PDD3908, PDD6902, PDEC2210V
