PDS6910 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PDS6910 Datasheet (PDF)

..1. Size:671K potens
pds6910.pdf pdf_icon

60V N-Channel MOSFETs PDS6910 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 50m 5.5A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the 60V,5.5A, RDS(ON) =

9.1. Size:733K potens
pds6903.pdf pdf_icon

60V P-Channel MOSFETs PDS6903 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -60V 30m -8.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -60V,-8.5A, RDS(ON) =30m@VGS = -10V performance, and withstand high

9.2. Size:711K potens
pds6904.pdf pdf_icon

60V N-Channel MOSFETs PDS6904 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 12m 10A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 60V,10A, RDS(ON) =12m @VGS = 10V performance, and withstand high energ

Otros transistores... PDS3807 , PDS3812 , PDS3903 , PDS4810 , PDS4906 , PDS4909 , PDS6903 , PDS6904 , IRF840 , PMEB2516P , PMEN2423S , PTP4N65 , PTF4N65 , PTP80N06 , PTY80N06 , PTP80N60 , PTY80N60 .