APM2324A Todos los transistores

 ..1. Size:410K  cn shikues
 apm2324a.pdf

APM2324A N-Channel Enhancement Mode MOSFET Channel Enhancement Mode MOSFET Feature 20V/3A, RDS(ON) = 80m (MAX) @VGS = 4.5V. = 4.5V. RDS(ON) = 90m (MAX) @VGS = 2.5V. = 2.5V. Super High dense cell design for extremely low R Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SC-59 for Surface Mount Package. Applications Power

 0.1. Size:166K  sino
 apm2324aa.pdf

APM2324AA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/3A, D RDS(ON)= 50m (Typ.) @ VGS= 4.5V S RDS(ON)= 65m (Typ.) @ VGS= 2.5V G RDS(ON)= 120m (Typ.) @ VGS= 1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available (RoHS Compliant) D G Applications Power Management in Notebook Computer, Portable Equipment and Ba

 8.1. Size:1476K  cn vbsemi
 apm2323aac.pdf

APM2323AAC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

 8.2. Size:870K  cn vbsemi
 apm2321ac.pdf

APM2321AC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIO

 8.3. Size:1477K  cn vbsemi
 apm2321aac.pdf

APM2321AAC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATI