SK2301A Todos los transistores

 ..1. Size:878K  cn shikues
 sk2301a.pdf

 0.1. Size:1025K  cn shikues
 sk2301aa.pdf

 9.1. Size:849K  cn shikues
 sk2302a.pdf

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 sk2302aa.pdf

SK2302AA SOT-23 Plastic-Encapsulate Transistors FEATURES Trench FET Power MOSFET MARKING A2SHB MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 V ID Drain current 2.9 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTER

 9.3. Size:719K  cn shikues
 sk2302aat.pdf

SK2302AAT SOT-523 Plastic-Encapsulate MOSFETS FEATURE TrenchFET Power MOSFET APPLICATIONS Load Switch for Portable Devices DC/DC Converter SOT 523 MARKING 2302 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (T a =25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Continuous Drain Current ID 2.1

 9.4. Size:878K  cn shikues
 sk2306.pdf

SK2306 N-Channel Enhancement Mode Power MOSFET Description The 2306 uses advanced trench technology to provide SK excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. D General Features VDS = 30V,ID = 3.6A G RDS(ON)

 9.5. Size:813K  cn shikues
 sk2307a.pdf

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 sk2304aa.pdf

 9.7. Size:1037K  cn shikues
 sk2300a.pdf