SSB65R360S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSB65R360S2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 105 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23.5 nS
Cossⓘ - Capacitancia de salida: 30 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.37 Ohm
Paquete / Cubierta: TO263
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SSB65R360S2 Datasheet (PDF)
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Otros transistores... SK2310AA , SK50N06A , SKQ50N03BD , SKQ55P02AD , SGO100N08L , SGO4606T , SGT100N45T , SGP100N45T , 4435 , SSI65R360S2 , SSB80R380S , SSF50R140S , SSP50R140S , SSW50R140S , SSA50R140S , SSF50R240S , SSP50R240S .
History: IRF740ALPBF | NP34N055HHE | MTB09N06Q8 | WSF3085 | IPP080N06NG | WSF15N10A | CRTD045N03L
History: IRF740ALPBF | NP34N055HHE | MTB09N06Q8 | WSF3085 | IPP080N06NG | WSF15N10A | CRTD045N03L
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