SWB038R10ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWB038R10ES
Código: SW038R10ES
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 205 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 132 nC
trⓘ - Tiempo de subida: 171 nS
Cossⓘ - Capacitancia de salida: 1050 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: TO-263
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SWB038R10ES Datasheet (PDF)
swb038r10es swp038r10es.pdf
SW038R10ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 100V High ruggedness ID : 120A Low RDS(ON) (Typ 3.6m)@VGS=10V RDS(ON) : 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 2 Application:Synchronous Rectification, 2 3 3 Inverter , Li Battery Protect Bo
sw038r10es swb038r10es swp038r10es swt038r10es.pdf
SW038R10ES N-channel Enhanced mode TO-263/TO-220/TO-247 MOSFET Features TO-263 TO-220 TO-247 BVDSS : 100V High ruggedness ID : 120A Low RDS(ON) (Typ 3.6m)@VGS=10V RDS(ON) : 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 Application:Synchronous Rectification, 2 2 3 3 3 Inverter ,
swp036r10e8s swb036r10e8s.pdf
SW036R10E8SN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 100V High ruggednessID : 175A Low RDS(ON) (Typ 3.8m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :3.8m Improved dv/dt Capability 100% Avalanche Tested211 Application:Synchronous Rectification,2233Li Battery Protect Board, Motor Drivers11. Gate 2.
swp031r06et swb031r06et.pdf
SW031R06ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 120A Low RDS(ON) (Typ 3.0m)@VGS=10V RDS(ON) : 3.0m Low Gate Charge (Typ 148nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Electronic Ballast , Motor 3 3 Control , Synchronous Rectificat
swb035r08et.pdf
SW035R08ET N-channel Enhanced mode TO-263 MOSFET Features TO-263 BVDSS : 80V High ruggedness ID : 120A Low RDS(ON) (Typ 3.3m)@VGS=10V RDS(ON) : 3.3m Low Gate Charge (Typ 185nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 Application:Synchronous Rectification, Inverter, 2 3 Li Battery Protect Board 1 1. Gate 2. Drain 3. Sou
swp030r04vt swb030r04vt.pdf
SW030R04VTN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 BVDSS : 40VTO-263 High ruggednessID : 130A Low RDS(ON) (Typ 3.7m)@VGS=4.5VRDS(ON) : 3.7m@VGS=4.5V(Typ 2.8m)@VGS=10V Low Gate Charge (Typ 120nC)2.8m@VGS=10V Improved dv/dt Capability 1 12 2 100% Avalanche Tested23 3 Application:Power Supply,LED Boost1. Gate 2.
sw035r08et swb035r08et.pdf
SW035R08ET N-channel Enhanced mode TO-263 MOSFET Features TO-263 BVDSS : 80V High ruggedness ID : 120A Low RDS(ON) (Typ 3.3m)@VGS=10V RDS(ON) : 3.3m Low Gate Charge (Typ 185nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 Application:Synchronous Rectification, Inverter, 2 3 Li Battery Protect Board 1 1. Gate 2. Drain 3. Sou
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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