SWHA055R03VT Todos los transistores

SW055R03VT N-channel Enhanced mode DFN3*3/DFN5*6 MOSFET Features BVDSS 30V DFN5*6 DFN3*3 High ruggedness ID 20A Low RDS(ON) (Typ 6.8m )@VGS=4.5V 1 8 1 8 RDS(ON) 6.8m @VGS=4.5V (Typ 5.7m )@VGS=10V 2 7 2 7 Low Gate Charge (Typ 25nC) 6 6 3 3 5.7m @VGS=10V 4 5 5 4 Improved dv/dt Capability 100% Avalanche Tested D A

SW055R03VT N-channel Enhanced mode DFN3*3/DFN5*6 MOSFET Features BVDSS 30V DFN5*6 DFN3*3 High ruggedness ID 20A Low RDS(ON) (Typ 6.8m )@VGS=4.5V 1 8 1 8 RDS(ON) 6.8m @VGS=4.5V (Typ 5.7m )@VGS=10V 2 7 2 7 Low Gate Charge (Typ 25nC) 6 6 3 3 5.7m @VGS=10V 4 5 5 4 Improved dv/dt Capability 100% Avalanche Tested D Application DC-DC Converte

SW056R68E7T N-channel Enhanced mode DFN5*6 MOSFET Features BVDSS 68V DFN5*6 High ruggedness Low RDS(ON) (Typ 5.5m )@VGS=10V ID 100A 1 8 Low Gate Charge (Typ 99nC) 2 7 RDS(ON) 5.5m Improved dv/dt Capability 6 3 5 100% Avalanche Tested 4 D Application Synchronous Rectification, Li Battery Protect Board, Inverter G 4. Gate 5,6,7,8.Drain 1,2,

SW065R03VLT N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 30V High ruggedness Low RDS(ON) (Typ 9.7m )@VGS=4.5V 1 8 ID 58A (Typ 6.4m )@VGS=10V 2 7 RDS(ON) 9.7m @VGS=4.5V 6 Low Gate Charge (Typ 34nC) 3 5 Improved dv/dt Capability 4 6.4m @VGS=10V 100% Avalanche Tested Application Synchronous Rectification, D Li Battery Protect

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A 1 8 Low RDS(ON) (Typ 7.1m )@VGS=10V 2 7 6 3 RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m @VGS=10V

SW026R03VT N-channel Enhanced mode DFN5*6 MOSFET Features BVDSS 30V High ruggedness DFN5*6 Low RDS(ON) (Typ 3.4m )@VGS=4.5V ID 19A (Typ 2.9m )@VGS=10V 1 8 RDS(ON) 3.4m @VGS=4.5V Low Gate Charge (Typ 112nC) 2 7 6 3 Improved dv/dt Capability 2.9m @VGS=10V 5 4 100% Avalanche Tested Application DC-DC Converter, Inverte

SW088R06VT N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 60V ID 50A High ruggedness 1 8 Low RDS(ON) (Typ 9.9m )@VGS=4.5V 2 7 RDS(ON) 9.9m @VGS=4.5V 6 3 (Typ 8.3m )@VGS=10V 5 4 Low Gate Charge (Typ 49nC) 8.3m @VGS=10V Improved dv/dt Capability D 100% Avalanche Tested Application Electronic Ballast, Motor 4.Gate 5,6,7,8.Dra

SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 5 6 Low RDS(ON) (Typ 9.2m )@VGS=10V 7 8 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m @VGS=10V 1 100% A

SW088R06VT N-channel Enhanced mode TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 1 8 Low RDS(ON) (Typ 9.2m )@VGS=10V 2 7 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 6 3 5 4 Improved dv/dt Capability 9.2m @VGS=10V 100% Avalanche Tested 1 1 2 2 Applicati

SW069R10VS N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9m )@VGS=4.5V 1 8 ID 60A Low RDS(ON) (Typ 7m )@VGS=10V 2 7 6 3 RDS(ON) 9m @VGS=4.5V Low Gate Charge (Typ 45nC) 5 4 Improved dv/dt Capability 7m @VGS=10V 100% Avalanche Tested Application Li Battery Protect Board, D Synchronous

SW069R06VT N-channel Enhanced mode TO-251/DFN5*6 MOSFET Features TO-251 DFN5*6 BVDSS 60V High ruggedness ID 60A Low RDS(ON) (Typ 7.0m )@VGS=4.5V (Typ 6.0m )@VGS=10V RDS(ON) 7.0m @VGS=4.5V Low Gate Charge (Typ 83nC) Improved dv/dt Capability 6.0m @VGS=10V 1 G(4) D(5,6,7,8) 100% Avalanche Tested 2 3 S(1,2,3) D Application

SW069R06VT N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 60V High ruggedness ID 60A Low RDS(ON) (Typ 5.7m )@VGS=4.5V 1 8 2 7 (Typ 4.9m )@VGS=10V 6 RDS(ON) 5.7m @VGS=4.5V 3 Low Gate Charge (Typ 84nC) 5 4 Improved dv/dt Capability 4.9m @VGS=10V 100% Avalanche Tested D Application Electronic Ballast, Motor Control Inverter 4.G

SW018R03VLT Features N-channel Enhanced mode DFN5*6 MOSFET High ruggedness BVDSS 30V DFN5*6 Low RDS(ON) (Typ 2.5m )@VGS=4.5V (Typ 1.6m )@VGS=10V ID 120A 1 8 Low Gate Charge (Typ 153nC) 2 7 RDS(ON) 2.5m @VGS=4.5V Improved dv/dt Capability 6 3 100% Avalanche Tested 5 4 1.6m @VGS=10V Application Synchronous Rectification, D Li Battery Prot

SW020R03VLT Features N-channel Enhanced mode DFN5*6 MOSFET High ruggedness BVDSS 30V DFN5*6 Low RDS(ON) (Typ 3.4m )@VGS=4.5V (Typ 1.9m )@VGS=10V ID 110A 1 8 Low Gate Charge (Typ 143nC) 2 7 RDS(ON) 3.4m @VGS=4.5V Improved dv/dt Capability 6 3 100% Avalanche Tested 5 4 1.9m @VGS=10V Application Synchronous Rectification, D Li Battery Prot

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS 100V High ruggedness ID 70A Low RDS(ON) (Typ 7.1m )@VGS=10V RDS(ON) 7.1m @VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m @VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A