SWF12N65D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWF12N65D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44.6 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 51 nS
Cossⓘ - Capacitancia de salida: 157 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de SWF12N65D MOSFET
- Selecciónⓘ de transistores por parámetros
SWF12N65D datasheet
swf12n65d swu12n65d swp12n65d swb12n65d.pdf
SW12N65D N-channel Enhanced mode TO-220F/TO-262/TO-220/TO-263 MOSFET Features TO-220F TO-262 TO-220 TO-263 BVDSS 650V High ruggedness ID 12A Low RDS(ON) (Typ 0.7 )@VGS=10V RDS(ON) 0.7 Low Gate Charge (Typ 45nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charger,LED,PC Power 3 3 3 1. Gate 2.
sw12n65d swf12n65d swu12n65d swp12n65d swb12n65d.pdf
SW12N65D N-channel Enhanced mode TO-220F/TO-262/TO-220/TO-263 MOSFET Features TO-262 TO-220F TO-220 TO-263 BVDSS 650V High ruggedness ID 12A Low RDS(ON) (Typ 0.7 )@VGS=10V RDS(ON) 0.7 Low Gate Charge (Typ 45nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charge,LED,PC Power 3 3 3 1. Gate 2
swf12n60d.pdf
SW12N60D N-channel Enhanced mode TO-220F MOSFET TO-220F Features BVDSS 600V ID 12A High ruggedness Low RDS(ON) (Typ 0.7 )@VGS=10V RDS(ON) 0.7 Low Gate Charge (Typ 48nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application UPS Inverter PC-POWER 3 1 3 1. Gate 2. Drain 3. Source General Description This power
sw12n70d swf12n70d swu12n70d swmn12n70d swy12n70d.pdf
SW12N70D N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET TO-220FT TO-220SF Features TO-220F TO-262 BVDSS 700V ID 12A High ruggedness Low RDS(ON) (Typ 0.75 )@VGS=10V RDS(ON) 0.75 Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 1 2 2 2 2 3 3 3 Application LED, PC Power, Char
Otros transistores... SWP075R06ET , SWK088R06VT , SWI088R06VT , SWD088R06VT , SWHA088R06VT , SWU10N70D , SWF10N70K , SWD10N70K , STF13NM60N , SWU12N65D , SWP12N65D , SWB12N65D , SWF12N70D , SWU12N70D , SWMN12N70D , SWY12N70D , SWF15N65D .
History: AP0103GMT-HF | IRF7321D2PBF | 4N60L-TQ2-R | IPP60R099P7 | 4N60L-TF1-T | RU1L002SN | HCA70R180
History: AP0103GMT-HF | IRF7321D2PBF | 4N60L-TQ2-R | IPP60R099P7 | 4N60L-TF1-T | RU1L002SN | HCA70R180
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