VN2222LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VN2222LL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VCossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 10 Ohm
Paquete / Cubierta: TO92
- Selección de transistores por parámetros
VN2222LL Datasheet (PDF)
vn10lls vn0605t vn0610ll vn2222ll.pdf

VN10LLS, VN0605T, VN0610LL, VN2222LLVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.1860VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2.5 W
vn2222ll.pdf

N-CHANNEL ENHANCEMENTVN2222LLMODE VERTICAL DMOS FETISSUE 2 FEB 94S G DTO92ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb = 25C ID 150 mAPulsed Drain Current IDM 1AGate Source Voltage VGS 40 VPower Dissipation at Tamb = 25C Ptot 400 mWOperating and Storage Temperature Range Tj:Tstg -55 to
vn2222ll.rev1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN2222LL/DTMOS FET TransistorNChannel EnhancementVN2222LL3 DRAINMotorola Preferred Device2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value Unit1DrainSource Voltage VDSS 60 Vdc23DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcCASE 2904, STYLE 22GateSource VoltageTO92 (TO226AA)
vn2222llg.pdf

VN2222LLGSmall Signal MOSFET150 mAmps, 60 VoltsN-Channel TO-92http://onsemi.comhttp://onsemi.comFeatures This is a Pb-Free Device*150 mA, 60 VRDS(on) = 7.5 WMAXIMUM RATINGSN-ChannelRating Symbol Value UnitDDrain -Source Voltage VDSS 60 VdcDrain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcGate-Source VoltageG- Continuous VGS 20 Vdc- Non-repetitive (tp 5
Otros transistores... TA75321 , TA75329 , TA75333 , TA75339 , TN0104N3 , TN0104N8 , VN10LF , VN10LP , P55NF06 , ZDM4206N , ZDM4306N , ZVN0120A , ZVN0124A , ZVN0540A , ZVN0545A , ZVN0545G , ZVN1409A .
History: ME2306BS-G
History: ME2306BS-G



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