VN2222LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VN2222LL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.4 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.15 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Conductancia de drenaje-sustrato (Cd): 60 pF
Resistencia entre drenaje y fuente RDS(on): 10 Ohm
Paquete / Cubierta: TO92
Búsqueda de reemplazo de MOSFET VN2222LL
VN2222LL Datasheet (PDF)
vn10lls vn0605t vn0610ll vn2222ll.pdf
VN10LLS, VN0605T, VN0610LL, VN2222LLVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.1860VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2.5 W
vn2222ll.pdf
N-CHANNEL ENHANCEMENTVN2222LLMODE VERTICAL DMOS FETISSUE 2 FEB 94S G DTO92ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb = 25C ID 150 mAPulsed Drain Current IDM 1AGate Source Voltage VGS 40 VPower Dissipation at Tamb = 25C Ptot 400 mWOperating and Storage Temperature Range Tj:Tstg -55 to
vn2222ll.rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN2222LL/DTMOS FET TransistorNChannel EnhancementVN2222LL3 DRAINMotorola Preferred Device2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value Unit1DrainSource Voltage VDSS 60 Vdc23DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcCASE 2904, STYLE 22GateSource VoltageTO92 (TO226AA)
vn2222llg.pdf
VN2222LLGSmall Signal MOSFET150 mAmps, 60 VoltsN-Channel TO-92http://onsemi.comhttp://onsemi.comFeatures This is a Pb-Free Device*150 mA, 60 VRDS(on) = 7.5 WMAXIMUM RATINGSN-ChannelRating Symbol Value UnitDDrain -Source Voltage VDSS 60 VdcDrain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcGate-Source VoltageG- Continuous VGS 20 Vdc- Non-repetitive (tp 5
vn0610l vn10kls vn2222l.pdf
VN0610L, VN10KLS, VN2222LVishay SiliconixN-Channel 60-V (D-S) MOSFETs with Zener GatePRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Zener Diode Input Protected D Extra ESD Protection D Drivers: Rel
vn0610l vn10kls vn2222l.pdf
VN0610L, VN10KLS, VN2222LVishay SiliconixN-Channel 60-V (D-S) MOSFETs with Zener GatePRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Zener Diode Input Protected D Extra ESD Protection D Drivers: Rel
vn0605t vn10le vn10lm vn2222lm.pdf
VN10/0605/0610/2222 SeriesN-Channel Enhancement-Mode MOSFET TransistorsVN10LE VN0605T VN2222LLVN10LM VN0610LL VN2222LMProduct SummaryPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38VN10LM 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.186060VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 7.5 @ VGS
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