SWD7N65D MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:1527K samwin
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SW7N65D N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF / TO-262N/DFN5*6 MOSFET Features TO-220 TO-251 TO-251N TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.1 ) @VGS=10V RDS(ON) 1.1 1 1 1 1 2 2 Low Gate Charge (Typ 30nC) 2 2 3 3 3 3 Improved dv/dt Capability D DFN5*6 TO-220F TO-220SF TO-262N 100% Avalan

..2. Size:1524K samwin
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SW7N65D N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF / TO-262N/DFN5*6 MOSFET Features TO-220 TO-251 TO-251N TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.1 ) @VGS=10V RDS(ON) 1.1 1 1 1 1 2 2 Low Gate Charge (Typ 30nC) 2 2 3 3 3 3 Improved dv/dt Capability D DFN5*6 TO-220F TO-220SF TO-262N 100% Avalan

..3. Size:1401K samwin
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SW7N65D N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-251U/TO-252/TO- 220F/TO-220SF/TO-262N/DFN5*6/TO-220FT MOSFET Features TO-220 TO-251 TO-251N TO-251U TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.1 ) @VGS=10V RDS(ON) 1.1 1 1 1 1 1 2 2 Low Gate Charge (Typ 30nC) 2 2 2 3 3 3 3 3 Improved dv/dt Capability D TO-220FT TO-262N DFN

0.1. Size:942K samwin
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SW7N65DD N-channel Enhanced mode TO-220F /TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS 650V ID 7A High ruggedness Low RDS(ON) (Typ 1.1 )@VGS=10V RDS(ON) 1.1 Low Gate Charge (Typ 28nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED, Charge, PC Power 1. Gate 2. Drain 3. So

0.2. Size:918K samwin
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SW7N65DA N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET Features TO-262N TO-251N TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.4 )@VGS=10V RDS(ON) 1.4 Low Gate Charge (Typ 25nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application LED , Charge, PC Power 1. Gate 2. Drai

7.1. Size:1089K samwin
swf7n65k2 swi7n65k2 swn7n65k2 swd7n65k2.pdf pdf_icon

SW7N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252 MOSFET Features TO-220F TO-251 TO-251N TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 0.57 )@VGS=10V RDS(ON) 0.57 Low Gate Charge (Typ 14.5nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application Charge,LED,PC Power 3 3 3

7.2. Size:908K samwin
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SW7N65M N-channel Enhanced mode TO-251N/TO-252/TO-220F/DFN5*6 MOSFET Features TO-251N TO-252 TO-220F DFN5*6 BVDSS 650V ID 7A High ruggedness 1 8 Low RDS(ON) (Typ 1.2 )@VGS=10V 2 7 RDS(ON) 1.2 6 3 Low Gate Charge (Typ 23nC) 4 5 Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 Application LED, Charger, PC Power 1 TO-251

7.3. Size:1121K samwin
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SW7N65K N-channel Enhanced mode TO-220F/TO-220SF/TO-251/TO- 251N/TO-252/TO-220 MOSFET Features TO-220F TO-220SF TO-251 TO-251N TO-252 TO-220 BVDSS 650V ID 7A High ruggedness Low RDS(ON) (Typ 0.5 )@VGS=10V RDS(ON) 0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 1 2 2 2 2 2 2 Applica

7.4. Size:725K samwin
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SW7N65J N-channel Enhanced mode TO-220SF/TO-252 MOSFET Features TO-220SF TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 0.6 )@VGS=10V RDS(ON) 0.6 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 2 Application LED , Charger, PC Power 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MO

SWD7N65D datasheet

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