SSP60R190SFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSP60R190SFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 36.5 nC
Tiempo de subida (tr): 18 nS
Conductancia de drenaje-sustrato (Cd): 68 pF
Resistencia entre drenaje y fuente RDS(on): 0.21 Ohm
Paquete / Cubierta: TO220
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SSP60R190SFD Datasheet (PDF)
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R190SFD2Rev. 1.1Aug. 2022www.supersemi.com.cnSSF60R190SFD2/SSP60R190SFD2600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Mult
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R190S2Rev. 1.4Mar. 2022www.supersemi.com.cnSSF60R190S2/SSP60R190S2/SSW60R190S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R190S2ERev. 1.0Aug. 2022www.supersemi.com.cnSSF60R190S2E/SSP60R190S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva
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