SSP60R260S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSP60R260S2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 28 nC
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 37 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SSP60R260S2
SSP60R260S2 Datasheet (PDF)
ssf60r260s2 ssp60r260s2 ssi60r260s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R260S2Rev. 1.0Jun. 2019www.supersemi.com.cnSSF60R260S2/SSP60R260S2/SSI60R260S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
ssf60r260s2 ssp60r260s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R260S2Rev. 1.4Oct. 2022www.supersemi.com.cnSSF60R260S2/SSP60R260S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
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