ZVN2120G Todos los transistores

 ..1. Size:45K  diodes
 zvn2120g.pdf

SOT223 N-CHANNEL ENHANCEMENT ZVN2120G MODE VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES D * VDS - 200V * RDS(ON) - 10 S PARTMARKING DETAIL - ZVN2120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 2A Gate-Source Voltage VGS 20 V Power Dissipation at

 0.1. Size:34K  diodes
 zvn2120gta zvn2120gtc.pdf

SOT223 N-CHANNEL ENHANCEMENT ZVN2120G MODE VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES D * VDS - 200V * RDS(ON) - 10 S PARTMARKING DETAIL - ZVN2120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 2A Gate-Source Voltage VGS 20 V Power Dissipation at

 7.1. Size:125K  diodes
 zvn2120a r3.pdf

Obsolete. Alternative is ZVN0124A. N-CHANNEL ENHANCEMENT 0A ZVN2120A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS(on)= 10 VGS= 0V 8V 7V D 6V G 5V S 4V E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 3V PARAMETER SYMBOL VALUE UNIT 2V Drain-Source Voltage VDS 200 V 8 10 Continuous Drain Current at Tamb=25 C ID 180 mA Pulsed Drain Cu

 7.2. Size:40K  diodes
 zvn2120c.pdf

N-CHANNEL ENHANCEMENT ZVN2120C MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 T V I VD D D E-Line T V TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID 8 I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I IT DITI D i VD V ID V V V I T I V V ID VD V V I