ISCNH320K Todos los transistores

 

ISCNH320K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ISCNH320K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
   Paquete / Cubierta: TO262
 

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ISCNH320K Datasheet (PDF)

 ..1. Size:255K  inchange semiconductor
 iscnh320k.pdf pdf_icon

ISCNH320K

isc N-Channel MOSFET Transistor ISCNH320KFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 135m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedImproved dv/dt capab

 7.1. Size:261K  inchange semiconductor
 iscnh327p.pdf pdf_icon

ISCNH320K

isc N-Channel MOSFET Transistor ISCNH327PFEATURESDrain Current I = 200A@ T =25D CDrain Source Voltage-: V = 85V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 7.2. Size:304K  inchange semiconductor
 iscnh325w.pdf pdf_icon

ISCNH320K

isc N-Channel MOSFET Transistor ISCNH325WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 90m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

 7.3. Size:304K  inchange semiconductor
 iscnh328w.pdf pdf_icon

ISCNH320K

isc N-Channel MOSFET Transistor ISCNH328WFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

MOSTRAR MÁS

Otros transistores... CIM6N120-220F , CIM6N120-247 , P7515BDB , PM5G8EA , PR804BA33 , QM0005D , QN4103M6N , ISCNH310P , IRFZ46N , ISCNH325W , ISCNH327P , ISCNH328W , ISCNH339D , ISCNH340B , ISCNH342P , ISCNH342W , ISCNH345P .

History: STB60NF06-1 | TMP10N60A

 

 
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