ISCNH340B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ISCNH340B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 135 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET ISCNH340B

ISCNH340B Datasheet (PDF)

..1. Size:329K inchange semiconductor
iscnh340b.pdf

isc N-Channel MOSFET Transistor ISCNH340BFEATURESDrain Current : I = 135A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

7.1. Size:260K inchange semiconductor
iscnh342p.pdf

isc N-Channel MOSFET Transistor ISCNH342PFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedABSOLUTE MAXIMUM RATINGS(

7.2. Size:246K inchange semiconductor
iscnh345p.pdf

isc N-Channel MOSFET Transistor ISCNH345PFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingSwitching regulator, DC-DC co

7.3. Size:251K inchange semiconductor
iscnh346f.pdf

isc N-Channel MOSFET Transistor ISCNH346FFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.ABSOLUTE

7.4. Size:302K inchange semiconductor
iscnh342w.pdf

isc N-Channel MOSFET Transistor ISCNH342WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedABSOLUTE MAXIMUM RATINGS(

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

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