ISCNH346F Todos los transistores

 

ISCNH346F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ISCNH346F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm

Encapsulados: TO220F

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ISCNH346F datasheet

 ..1. Size:251K  inchange semiconductor
 iscnh346f.pdf pdf_icon

ISCNH346F

isc N-Channel MOSFET Transistor ISCNH346F FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high efficiency switch mode power supply. ABSOLUTE

 7.1. Size:260K  inchange semiconductor
 iscnh342p.pdf pdf_icon

ISCNH346F

isc N-Channel MOSFET Transistor ISCNH342P FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Low gate charge Fast switching speed ABSOLUTE MAXIMUM RATINGS(

 7.2. Size:329K  inchange semiconductor
 iscnh340b.pdf pdf_icon

ISCNH346F

isc N-Channel MOSFET Transistor ISCNH340B FEATURES Drain Current I = 135A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 7.3. Size:246K  inchange semiconductor
 iscnh345p.pdf pdf_icon

ISCNH346F

isc N-Channel MOSFET Transistor ISCNH345P FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching Switching regulator, DC-DC co

MOSTRAR MÁS

Otros transistores... ISCNH325W , ISCNH327P , ISCNH328W , ISCNH339D , ISCNH340B , ISCNH342P , ISCNH342W , ISCNH345P , 8N60 , ISCNL343D , ISCNL344D , ISCPL322D , IXFH60N60X2A , MN7R6-60PS , STH80N10LF7-2AG , VP2320N1 , VIS30019 .

History: SM3419NHQA | WMO16N65SR | WMN10N70C4 | WMN26N60F2 | WML16N70SR | WMM120N04TS | WMN26N60C4

 

 

 

 

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