MN7R6-60PS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MN7R6-60PS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 136 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de MN7R6-60PS MOSFET
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MN7R6-60PS datasheet
mn7r6-60ps.pdf
iscN-Channel MOSFET Transistor MN7R6-60PS FEATURES Drain Current I =120A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R =0.005 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
psmn7r6-60ps.pdf
PSMN7R6-60PS N-channel 60 V 7.8 m standard level MOSFET Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
psmn7r6-60ps.pdf
isc N-Channel MOSFET Transistor PSMN7R6-60PS FEATURES Drain Current I = 65A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
psmn7r6-60xs.pdf
PSMN7R6-60XS N-channel 60 V 7.8 m standard level MOSFET in TO220F (SOT186A) 16 December 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a TO-220F (SOT186A) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 2. Features and benefits High efficiency
Otros transistores... ISCNH342P , ISCNH342W , ISCNH345P , ISCNH346F , ISCNL343D , ISCNL344D , ISCPL322D , IXFH60N60X2A , STP65NF06 , STH80N10LF7-2AG , VP2320N1 , VIS30019 , VIS30023 , VIS30024 , VS3P07C , WMB128N10T2 , WML07N80M3 .
History: 38N10A
History: 38N10A
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