WMJ26N60C4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMJ26N60C4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 135 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 37 nS
Cossⓘ - Capacitancia de salida: 48 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Encapsulados: TO247
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WMJ26N60C4 datasheet
wml26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmo26n60c4 wmj26n60c4.pdf
WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60C WMN2 MJ26N60C 26N60C4, WMM26N60C4, WM C4 600V 0.16 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM
wml26n60c4 wmo26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmj26n60c4.pdf
WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60C WMN2 MJ26N60C 26N60C4, WMM26N60C4, WM C4 600V 0.16 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM
wml26n60f2 wmo26n60f2 wmk26n60f2 wmn26n60f2 wmm26n60f2 wmj26n60f2.pdf
WML2 N60F2, WM F2 26N60F2, WMO26N MK26N60F WMN2 N60F2, WM F2 26N60F2, WMM26N MJ26N60F 600V 0.17 S T V Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s S D D G G G S D G SJ-MOSFE while of an extremely fa
wml26n65c4 wmo26n65c4 wmk26n65c4 wmn26n65c4 wmm26n65c4 wmj26n65c4.pdf
WML26N65C4, WMO26N6 WM C4 W 65C4, MK26N65C WMN2 MJ26N65C 26N65C4, WMM26N65C4, WM C4 650V 0.16 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM
Otros transistores... WMP07N80M3 , WMK07N80M3 , WMN07N80M3 , WML26N60C4 , WMK26N60C4 , WMN26N60C4 , WMM26N60C4 , WMO26N60C4 , IRF730 , WML26N65C4 , WMK26N65C4 , WMN26N65C4 , WMM26N65C4 , WMO26N65C4 , WMJ26N65C4 , WML28N60C4 , WMK28N60C4 .
History: BLM3401 | 2SK1334 | WMJ69N30DMH | WMJ90N65C4 | VS3640DB
History: BLM3401 | 2SK1334 | WMJ69N30DMH | WMJ90N65C4 | VS3640DB
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